A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10
文献类型：期刊论文
| 作者 | Yu, Jianding1; Liu, Yan1; Pan, Xiuhong1; Zhao, Hongyang1; Kumar, Velu Nirmal2; Arivanandhan, Mukannan2; Momose, Yoshimi2; Hayakawa, Yasuhiro2; Zhang, Xingwang3; Luo, Xinghong4 |
| 刊名 | MICROGRAVITY SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2016-05-01 |
| 卷号 | 28期号:2页码:143-154 |
| 关键词 | Microgravity Chinese recovery satellite Gravity effect Alloy semiconductor X-ray penetration method Temperature freezing method |
| 英文摘要 | The paper reviewed the previous microgravity experiment using Chinese recovery satellite, the in-situ measurement of composition profile in the solution by X-ray penetration method and homogeneous growth of InGaSb by temperature freezing method under terrestrial condition for making clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals. The previous experimental results showed that the shape of solid/liquid interfaces and composition profile in the solution were significantly affected by gravity. Based on the previous microgravity experimental results, experimental conditions were investigated to grow homogeneous In Ga-x Sb1-x with higher indium composition at Chinese recovery satellite SJ-10 in near future. |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| 类目[WOS] | Engineering, Aerospace ; Thermodynamics ; Mechanics |
| 研究领域[WOS] | Engineering ; Thermodynamics ; Mechanics |
| 关键词[WOS] | RAY PENETRATION METHOD ; FLOATING-ZONE GROWTH ; IN-SITU OBSERVATION ; DISSOLUTION PROCESS ; MELT ; GASB ; GRAVITY ; SILICON ; SEMICONDUCTORS ; GASB/INSB/GASB |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000376652000009 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23076]  |
| 专题 | 上海硅酸盐研究所_结构陶瓷与复合材料工程研究中心_期刊论文 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China 2.Shizuoka Univ, Elect Res Inst, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan 3.Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China 4.Chinese Acad Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 5.Osaka Univ, Grad Sch Engn Sci, 1-3 Machiganeyama, Osaka 5608531, Japan 6.Japan Aerosp Explorat Agcy, Inst Space & Astronaut Sci, Chuo Ku, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 2525210, Japan 7.SOKENDAI, Sch Phys Sci, Chuo Ku, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 2525210, Japan |
| 推荐引用方式 GB/T 7714 | Yu, Jianding,Liu, Yan,Pan, Xiuhong,et al. A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10[J]. MICROGRAVITY SCIENCE AND TECHNOLOGY,2016,28(2):143-154. |
| APA | Yu, Jianding.,Liu, Yan.,Pan, Xiuhong.,Zhao, Hongyang.,Kumar, Velu Nirmal.,...&Inatomi, Yuko.(2016).A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10.MICROGRAVITY SCIENCE AND TECHNOLOGY,28(2),143-154. |
| MLA | Yu, Jianding,et al."A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10".MICROGRAVITY SCIENCE AND TECHNOLOGY 28.2(2016):143-154. |
入库方式： OAI收割
来源：上海硅酸盐研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。