中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Tunable Ferromagnetic Transition Temperature and Vertical Hysteretic Shift in SrRuO3 Films Integrated on Si(001)

文献类型:期刊论文

作者Zheng, Ming1; Wang, Wei2
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2016-06-08
卷号8期号:22页码:14012-14018
关键词epitaxial films ferromagnetic transition temperature vertical magnetization shift lattice distortion spintronic device
英文摘要SrRuO3 thin films have been epitaxially integrated on complementary metal oxide semiconductor (CMOS) compatible Si(001) substrates via pulsed laser deposition using a unique buffer layer (SrTiO3/TiN) approach. When the oxygen pressure during deposition was controlled, a dramatic suppression in the ferromagnetic transition temperature (T-C) of up to 53 K was observed, caused by the growth-induced ruthenium vacancies rather than the oxygen vacancies. The ruthenium vacancies can also effectively tune the vertical magnetization, shift (M-shift) in hysteresis loops, and thus we achieved a giant M-shift of 240%. Transport and magnetic measurements reveal that these appreciable physical phenomena are closely related to the ruthenium defect-induced local disorder and complex effects due to the strongly hybridized p-d orbitals as well as the induced lattice distortion. These observations indicate the importance of ruthenium defects in controlling the vertical magnetization shift and ferromagnetic transition temperature in this transitional metal oxide.
WOS标题词Science & Technology ; Technology
类目[WOS]Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
研究领域[WOS]Science & Technology - Other Topics ; Materials Science
关键词[WOS]EXCHANGE-BIAS ; THIN-FILMS ; MULTILAYERS ; DEPOSITION
收录类别SCI
语种英语
WOS记录号WOS:000377642100040
源URL[http://ir.sic.ac.cn/handle/331005/22976]  
专题上海硅酸盐研究所_能量转换材料重点实验室_期刊论文
作者单位1.Natl Univ Singapore, Dept Mat Sci & Engn, Fac Engn, Singapore 117574, Singapore
2.Chinese Acad Sci, Shanghai Inst Ceram, Lab Ecophotoelect Technol, Shanghai 201800, Peoples R China
推荐引用方式
GB/T 7714
Zheng, Ming,Wang, Wei. Tunable Ferromagnetic Transition Temperature and Vertical Hysteretic Shift in SrRuO3 Films Integrated on Si(001)[J]. ACS APPLIED MATERIALS & INTERFACES,2016,8(22):14012-14018.
APA Zheng, Ming,&Wang, Wei.(2016).Tunable Ferromagnetic Transition Temperature and Vertical Hysteretic Shift in SrRuO3 Films Integrated on Si(001).ACS APPLIED MATERIALS & INTERFACES,8(22),14012-14018.
MLA Zheng, Ming,et al."Tunable Ferromagnetic Transition Temperature and Vertical Hysteretic Shift in SrRuO3 Films Integrated on Si(001)".ACS APPLIED MATERIALS & INTERFACES 8.22(2016):14012-14018.

入库方式: OAI收割

来源:上海硅酸盐研究所

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