Intrinsic Photoconductive Switches Based on Semi-Insulator 4H-SiC
文献类型：期刊论文
| 作者 | Jiang, Shuqing1; Song, Chaoyang2; Zhang, Liuqiang3; Zhang, Yuming2; Huang, Wei4; Guo, Hui2 |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2016-04-01 |
| 卷号 | 63期号:4页码:1582-1586 |
| 关键词 | Optical switches photoconducting devices |
| 英文摘要 | A high-purity semi-insulator 4H-SiC intrinsic photoconductive switch is presented. The photoconductive semiconductor switch device is fabricated as lateral structures with the electric contact on the same side. The effect of the SiO2 passivation layer has been investigated on the breakdown voltage. The minimum ON-state resistance is 16 Omega, and the breakdown voltage is 11 kV. A new phenomenon that two steps exist on the rising edge of the photocurrent is observed, and a model of resistor and capacitor in parallel is built to explain it. |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| 类目[WOS] | Engineering, Electrical & Electronic ; Physics, Applied |
| 研究领域[WOS] | Engineering ; Physics |
| 关键词[WOS] | HIGH-POWER ; N(+)-GAN SUBCONTACT ; SEMICONDUCTOR |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000373063800027 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23011]  |
| 专题 | 上海硅酸盐研究所_人工晶体研究中心_期刊论文 |
| 作者单位 | 1.China Acad Engn Phys, Inst Nucl Phys & Chem, Mianyang 621000, Peoples R China 2.Xidian Univ, Xian 710071, Peoples R China 3.Chongqing Univ, Chongqing 400044, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201899, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jiang, Shuqing,Song, Chaoyang,Zhang, Liuqiang,et al. Intrinsic Photoconductive Switches Based on Semi-Insulator 4H-SiC[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016,63(4):1582-1586. |
| APA | Jiang, Shuqing,Song, Chaoyang,Zhang, Liuqiang,Zhang, Yuming,Huang, Wei,&Guo, Hui.(2016).Intrinsic Photoconductive Switches Based on Semi-Insulator 4H-SiC.IEEE TRANSACTIONS ON ELECTRON DEVICES,63(4),1582-1586. |
| MLA | Jiang, Shuqing,et al."Intrinsic Photoconductive Switches Based on Semi-Insulator 4H-SiC".IEEE TRANSACTIONS ON ELECTRON DEVICES 63.4(2016):1582-1586. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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