中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Intrinsic Photoconductive Switches Based on Semi-Insulator 4H-SiC

文献类型:期刊论文

作者Jiang, Shuqing1; Song, Chaoyang2; Zhang, Liuqiang3; Zhang, Yuming2; Huang, Wei4; Guo, Hui2
刊名IEEE TRANSACTIONS ON ELECTRON DEVICES
出版日期2016-04-01
卷号63期号:4页码:1582-1586
关键词Optical switches photoconducting devices
英文摘要A high-purity semi-insulator 4H-SiC intrinsic photoconductive switch is presented. The photoconductive semiconductor switch device is fabricated as lateral structures with the electric contact on the same side. The effect of the SiO2 passivation layer has been investigated on the breakdown voltage. The minimum ON-state resistance is 16 Omega, and the breakdown voltage is 11 kV. A new phenomenon that two steps exist on the rising edge of the photocurrent is observed, and a model of resistor and capacitor in parallel is built to explain it.
WOS标题词Science & Technology ; Technology ; Physical Sciences
类目[WOS]Engineering, Electrical & Electronic ; Physics, Applied
研究领域[WOS]Engineering ; Physics
关键词[WOS]HIGH-POWER ; N(+)-GAN SUBCONTACT ; SEMICONDUCTOR
收录类别SCI
语种英语
WOS记录号WOS:000373063800027
源URL[http://ir.sic.ac.cn/handle/331005/23011]  
专题上海硅酸盐研究所_人工晶体研究中心_期刊论文
作者单位1.China Acad Engn Phys, Inst Nucl Phys & Chem, Mianyang 621000, Peoples R China
2.Xidian Univ, Xian 710071, Peoples R China
3.Chongqing Univ, Chongqing 400044, Peoples R China
4.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201899, Peoples R China
推荐引用方式
GB/T 7714
Jiang, Shuqing,Song, Chaoyang,Zhang, Liuqiang,et al. Intrinsic Photoconductive Switches Based on Semi-Insulator 4H-SiC[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016,63(4):1582-1586.
APA Jiang, Shuqing,Song, Chaoyang,Zhang, Liuqiang,Zhang, Yuming,Huang, Wei,&Guo, Hui.(2016).Intrinsic Photoconductive Switches Based on Semi-Insulator 4H-SiC.IEEE TRANSACTIONS ON ELECTRON DEVICES,63(4),1582-1586.
MLA Jiang, Shuqing,et al."Intrinsic Photoconductive Switches Based on Semi-Insulator 4H-SiC".IEEE TRANSACTIONS ON ELECTRON DEVICES 63.4(2016):1582-1586.

入库方式: OAI收割

来源:上海硅酸盐研究所

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