Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC
文献类型：期刊论文
| 作者 | Zhou Tian-Yu1,2; Liu Xue-Chao1; Huang Wei1; Zhuo Shi-Yi1; Zheng Yan-Qing1; Shi Er-Wei1 |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2015-12-01 |
| 卷号 | 24期号:12 |
| 关键词 | SiC Ohmic contact Ni/Ta |
| 英文摘要 | A Ni/Ta bilayer is deposited on n-type 6H-SiC and then annealed at different temperatures to form an ohmic contact. The electrical properties are characterized by I-V curve measurement and the specific contact resistance is extracted by the transmission line method. The phase formation and microstructure of the Ni/Ta bilayer are studied after thermal annealing. The crystalline and microstructure properties are analyzed by using glance incident x-ray diffraction (GIXRD), Raman spectroscopy, and transmission electron microscopy. It is found that the transformation from the Schottky to the Ohmic occurs at 1050 degrees C and the GIXRD results show a distinct phase change from Ta2C to TaC at this temperature. A specific contact resistance of 6.5 x 10(-5) Omega.cm(2) is obtained for sample Ni(80 nm)/Ta(20 nm)/6H-SiC after being annealed at 1050 degrees C. The formation of the TaC phase is regarded as the main reason for the excellent Ohmic properties of the Ni/Ta contacts to 6H-SiC. Raman and TEM data reveal that the graphite carbon is drastically consumed by the Ta element, which can improve the contact thermal stability. A schematic diagram is proposed to illustrate the microstructural changes of Ni/Ta/6H-SiC when annealed at different temperatures. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 关键词[WOS] | OHMIC CONTACTS ; SILICON-CARBIDE ; SINGLE-CRYSTAL ; HIGH-POWER |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000366977800049 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23329]  |
| 专题 | 上海硅酸盐研究所_人工晶体研究中心_期刊论文 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou Tian-Yu,Liu Xue-Chao,Huang Wei,et al. Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC[J]. CHINESE PHYSICS B,2015,24(12). |
| APA | Zhou Tian-Yu,Liu Xue-Chao,Huang Wei,Zhuo Shi-Yi,Zheng Yan-Qing,&Shi Er-Wei.(2015).Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC.CHINESE PHYSICS B,24(12). |
| MLA | Zhou Tian-Yu,et al."Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC".CHINESE PHYSICS B 24.12(2015). |
入库方式： OAI收割
来源：上海硅酸盐研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。