Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film
文献类型：期刊论文
| 作者 | Wang, Minhuan1; Bian, Jiming1,2; Sun, Hongjun1; Liu, Hongzhu1; Li, Xiaoxuan1; Luo, Yingmin1; Huang, Huolin1; Zhang, Yuzhi2 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE
 |
| 出版日期 | 2016-09-01 |
| 卷号 | 51期号:17页码:8233-8239 |
| 英文摘要 | High-quality VO2 films with precisely controlled thicknesses were grown on sapphire substrates by plasma-assisted oxide molecular beam epitaxy (MBE). To evaluate the degradation of semiconductor-metal transition (SMT) behavior of VO2 films under solar radiation, the temperature-driven SMT was investigated by measuring the electrical resistance during heating and cooling processes under solar simulator AM1.5, which provided illumination approximately matching the natural sunlight. The distinct reversible SMTs were observed for all the samples, whereas a remarkably conflicting trend in resistance change for extremely thin and thick samples was observed after exposure to the sunlight soaking system. The corresponding mechanism was proposed based on sunlight-induced resistance changes due to the transformation in the electron correlation and structural symmetry. The results might be especially attractive for some specific applications of VO2 films where solar radiation was inevitable. |
| WOS标题词 | Science & Technology ; Technology |
| 类目[WOS] | Materials Science, Multidisciplinary |
| 研究领域[WOS] | Materials Science |
| 关键词[WOS] | PHASE-TRANSITION ; INSULATOR-TRANSITION ; SAPPHIRE SUBSTRATE ; OPTICAL-PROPERTIES ; THIN-FILMS ; MODULATION ; GROWTH |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000378542500036 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/22943]  |
| 专题 | 上海硅酸盐研究所_特种无机涂层重点实验室_期刊论文 |
| 作者单位 | 1.Dalian Univ Technol, Sch Phys & Optoelect Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China 2.Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Minhuan,Bian, Jiming,Sun, Hongjun,et al. Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film[J]. JOURNAL OF MATERIALS SCIENCE,2016,51(17):8233-8239. |
| APA | Wang, Minhuan.,Bian, Jiming.,Sun, Hongjun.,Liu, Hongzhu.,Li, Xiaoxuan.,...&Zhang, Yuzhi.(2016).Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film.JOURNAL OF MATERIALS SCIENCE,51(17),8233-8239. |
| MLA | Wang, Minhuan,et al."Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO2 film".JOURNAL OF MATERIALS SCIENCE 51.17(2016):8233-8239. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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