Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure
文献类型：期刊论文
| 作者 | Li, Xiaoxuan1; Bian, Jiming1,2; Wang, Minhuan1; Miao, Lihua1; Liu, Hongzhu1; Qin, Fuwen1; Zhang, Yuzhi2; Luo, Yingmin1 |
| 刊名 | MATERIALS RESEARCH BULLETIN
 |
| 出版日期 | 2016-05-01 |
| 卷号 | 77页码:199-204 |
| 关键词 | Nitrides Oxide Thin films Sputtering Electrical properties |
| 英文摘要 | The nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure was realized by sputtering deposition of VO2 films on p-GaN/sapphire substrates. The structure and electrical properties of the as-grown VO2/p-GaN/sapphire heterostructure were investigated systematically. The distinct reversible semiconductor-to-metal transition (SMT) with resistance change up to nearly two orders of magnitude was observed for the sample deposited at the optimized conditions. Moreover, the clear rectifying current-voltage characteristics originated from the n-VO2/p-GaN interface were demonstrated both before and after SMT of VO2 over layer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. Our present finding demonstrated the feasibility of integrating correlated oxide and wide bandgap nitride semiconductors, and will further motivate research in novel devices with combined functional properties of both kinds of materials. (C) 2016 Elsevier Ltd. All rights reserved. |
| WOS标题词 | Science & Technology ; Technology |
| 类目[WOS] | Materials Science, Multidisciplinary |
| 研究领域[WOS] | Materials Science |
| 关键词[WOS] | METAL-INSULATOR-TRANSITION ; VO2 THIN-FILMS ; DENSITY ; MEMORY |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000374360700029 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23123]  |
| 专题 | 上海硅酸盐研究所_特种无机涂层重点实验室_期刊论文 |
| 作者单位 | 1.Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China 2.Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Xiaoxuan,Bian, Jiming,Wang, Minhuan,et al. Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure[J]. MATERIALS RESEARCH BULLETIN,2016,77:199-204. |
| APA | Li, Xiaoxuan.,Bian, Jiming.,Wang, Minhuan.,Miao, Lihua.,Liu, Hongzhu.,...&Luo, Yingmin.(2016).Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure.MATERIALS RESEARCH BULLETIN,77,199-204. |
| MLA | Li, Xiaoxuan,et al."Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure".MATERIALS RESEARCH BULLETIN 77(2016):199-204. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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