Growth and characterization of VO2/p-GaN/sapphire heterostructure with phase transition properties
文献类型：期刊论文
| 作者 | Bian, Jiming1,2; Wang, Minhuan1; Miao, Lihua1; Li, Xiaoxuan1; Luo, Yingmin1; Zhang, Dong1,3; Zhang, Yuzhi2 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2015-12-01 |
| 卷号 | 357页码:282-286 |
| 关键词 | Vanadium oxide p-GaN Pulsed laser deposition Phase transition |
| 英文摘要 | High quality pure phase VO2 films were deposited on p-GaN/sapphire substrates by pulsed laser deposition (PLD). A well-defined interface with dense and uniform morphology was observed in the as-grown VO2/p-GaN/sapphire heterostructure. The X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO2 films was principally composed of V4+ with trace amount of V5+, no other valence state of V was detected. Meanwhile, a distinct reversible semiconductor-to-metal (SMT) phase transition with resistance change up to nearly three orders of magnitude was observed in the temperature dependent electrical resistance measurement, which was comparable to the high quality VO2 film grown directly on sapphire substrates. Our present findings will give a deeper insight into the physical mechanism behind the exotic characteristics of VO2/p-GaN heterostructure, and further motivate research in novel devices with combined functional properties of both correlated oxide and wide bandgap nitride semiconductors. (C) 2015 Elsevier B.V. All rights reserved. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 研究领域[WOS] | Chemistry ; Materials Science ; Physics |
| 关键词[WOS] | METAL-INSULATOR-TRANSITION ; VANADIUM DIOXIDE ; OPTICAL-PROPERTIES ; FILMS ; XPS ; PLD |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000366216900037 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23341]  |
| 专题 | 上海硅酸盐研究所_特种无机涂层重点实验室_期刊论文 |
| 作者单位 | 1.Dalian Univ Technol, Sch Phys & Optoelect Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China 2.Chinese Acad Sci, Key Lab Inorgan Coating Mat, Shanghai 200050, Peoples R China 3.Shenyang Inst Engn, New Energy Source Res Ctr, Shenyang 110136, Peoples R China |
| 推荐引用方式 GB/T 7714 | Bian, Jiming,Wang, Minhuan,Miao, Lihua,et al. Growth and characterization of VO2/p-GaN/sapphire heterostructure with phase transition properties[J]. APPLIED SURFACE SCIENCE,2015,357:282-286. |
| APA | Bian, Jiming.,Wang, Minhuan.,Miao, Lihua.,Li, Xiaoxuan.,Luo, Yingmin.,...&Zhang, Yuzhi.(2015).Growth and characterization of VO2/p-GaN/sapphire heterostructure with phase transition properties.APPLIED SURFACE SCIENCE,357,282-286. |
| MLA | Bian, Jiming,et al."Growth and characterization of VO2/p-GaN/sapphire heterostructure with phase transition properties".APPLIED SURFACE SCIENCE 357(2015):282-286. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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