High-Peak Power Passively Q-Switched 2-mu m Laser With MoS2 Saturable Absorber
文献类型：期刊论文
| 作者 | Luan, Chao1,2; Zhang, Xiaoyan3; Yang, Kejian4,5,6; Zhao, Jia1,2; Zhao, Shengzhi1,2; Li, Tao1,2; Qiao, Wenchao1,2; Chu, Hongwei1,2; Qiao, Junpeng1,2; Wang, Jun3 |
| 刊名 | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
 |
| 出版日期 | 2017 |
| 卷号 | 23期号:1 |
| 关键词 | High peak power MoS2 saturable absorber solid-state 2 mu m laser |
| 英文摘要 | The passive Q-switching characteristics of a diode-pumped Tm,Ho:YAP laser at 2 mu m based on a MoS2 saturable absorber (SA) is presented for the first time. Pulses as short as 435 ns under a repetition rate of about 55 kHz were generated at the incident pump power of 8.4 W, corresponding to the pulse peak power up to 11.3 W. This is, to the best of our knowledge, the highest pulse peak power, ever obtained from MoS2 based passively Q-switched 2-mu m lasers. The experimental results sufficiently validated the feasibility of MoS2 as SA for solid-state 2-mu m lasers. |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| 类目[WOS] | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
| 研究领域[WOS] | Engineering ; Optics ; Physics |
| 关键词[WOS] | MOLYBDENUM-DISULFIDE MOS2 ; BLACK PHOSPHORUS ; FIBER LASERS ; GRAPHENE ; PULSE ; SCATTERING ; TISSUE |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000380347600001 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/22921]  |
| 专题 | 上海硅酸盐研究所_透明光功能无机材料重点实验室_期刊论文 |
| 作者单位 | 1.Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China 2.Shandong Univ, Shandong Prov Key Lab Laser Technol & Applicat, Jinan 250100, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China 4.Shandong Prov Key Lab Laser Technol & Applicat, State Key Lab Crystal Mat, Jinan 250100, Peoples R China 5.Sch Informat Sci & Engn, Jinan 250100, Peoples R China 6.Shandong Univ, Jinan 250100, Peoples R China 7.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Transparent & Optofunct Inorgan Mat, Shanghai 200050, Peoples R China 8.Jiangsu Normal Univ, Sch Phys & Elect Engn, Jiangsu Key Lab Adv Laser Mat & Devices, Xuzhou 221116, Peoples R China 9.Tongji Univ, Sch Phys Sci & Engn, Inst Adv Study, Shanghai 200092, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luan, Chao,Zhang, Xiaoyan,Yang, Kejian,et al. High-Peak Power Passively Q-Switched 2-mu m Laser With MoS2 Saturable Absorber[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,2017,23(1). |
| APA | Luan, Chao.,Zhang, Xiaoyan.,Yang, Kejian.,Zhao, Jia.,Zhao, Shengzhi.,...&Xu, Jun.(2017).High-Peak Power Passively Q-Switched 2-mu m Laser With MoS2 Saturable Absorber.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,23(1). |
| MLA | Luan, Chao,et al."High-Peak Power Passively Q-Switched 2-mu m Laser With MoS2 Saturable Absorber".IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 23.1(2017). |
入库方式： OAI收割
来源：上海硅酸盐研究所
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