Passive Q-switching of microchip lasers based on Ho:YAG ceramics
文献类型：期刊论文
| 作者 | Lan, R.1,2; Loiko, P.3; Mateos, X.1,4; Wang, Y.1; Li, J.5; Pan, Y.5; Choi, S. Y.6,7; Kim, M. H.6,7; Rotermund, F.6,7; Yasukevich, A.3 |
| 刊名 | APPLIED OPTICS
 |
| 出版日期 | 2016-06-20 |
| 卷号 | 55期号:18页码:4877-4887 |
| 英文摘要 | A Ho:YAG ceramic microchip laser pumped by a Tm fiber laser at 1910 nm is passively Q-switched by single-and multi-layer graphene, single-walled carbon nanotubes (SWCNTs), and Cr2+:ZnSe saturable absorbers (SAs). Employing SWCNTs, this laser generated an average power of 810 mW at 2090 nm with a slope efficiency of 68% and continuous wave to Q-switching conversion efficiency of 70%. The shortest pulse duration was 85 ns at a repetition rate of 165 kHz, and the pulse energy reached 4.9 mu J. The laser performance and pulse stability were superior compared to graphene SAs even for a different number of graphene layers (n = 1 to 4). A model for the description of the Ho:YAG laser Q-switched by carbon nanostructures is presented. This modeling allowed us to estimate the saturation intensity for multi-layered graphene and SWCNT SAs to be 1.2 +/- 0.2 and 7 +/- 1 MW/cm(2), respectively. When using Cr2+:ZnSe, the Ho:YAG microchip laser generated 11 ns/25 mu J pulses at a repetition rate of 14.8 kHz. (C) 2016 Optical Society of America |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Optics |
| 研究领域[WOS] | Optics |
| 关键词[WOS] | SOLID-STATE LASERS ; HO-YAG LASER ; SATURABLE ABSORBER ; TRANSPARENT CERAMICS ; OUTPUT POWER ; MODE-LOCKING ; GRAPHENE ; EFFICIENT ; OPERATION ; FABRICATION |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000378075400015 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/22955]  |
| 专题 | 上海硅酸盐研究所_透明光功能无机材料重点实验室_期刊论文 |
| 作者单位 | 1.Max Born Inst Nonlinear Opt & Short Pulse Spect, 2A Max Born Str, D-12489 Berlin, Germany 2.Yantai Univ, Sch Optoelect Informat Sci & Technol, Qingquan Rd 30, Yantai 264005, Peoples R China 3.Belarusian Natl Tech Univ, Ctr Opt Mat & Technol, 65-17 Nezavisimosti Ave, Minsk 220013, Byelarus 4.Univ Rovira & Virgili, Fis & Cristal Log Mat & Nanomat FiCMA FiCNA, Campus Sescelades,C Marcel Li Domingo S-N, E-43007 Tarragona, Spain 5.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Transparent & Optofunct Inorgan Mat, 1295 Dingxi Rd, Shanghai 200050, Peoples R China 6.Ajou Univ, Dept Phys, San 5 Wonchun Dong, Suwon 443749, South Korea 7.Ajou Univ, Dept Energy Syst Res, San 5 Wonchun Dong, Suwon 443749, South Korea |
| 推荐引用方式 GB/T 7714 | Lan, R.,Loiko, P.,Mateos, X.,et al. Passive Q-switching of microchip lasers based on Ho:YAG ceramics[J]. APPLIED OPTICS,2016,55(18):4877-4887. |
| APA | Lan, R..,Loiko, P..,Mateos, X..,Wang, Y..,Li, J..,...&Petrov, V..(2016).Passive Q-switching of microchip lasers based on Ho:YAG ceramics.APPLIED OPTICS,55(18),4877-4887. |
| MLA | Lan, R.,et al."Passive Q-switching of microchip lasers based on Ho:YAG ceramics".APPLIED OPTICS 55.18(2016):4877-4887. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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