Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching
文献类型：期刊论文
| 作者 | Nan, Tianxiang1; Emori, Satoru1; Peng, Bin2; Wang, Xinjun1; Hu, Zhongqiang1; Xie, Li1; Gao, Yuan1; Lin, Hwaider1; Jiao, Jie3; Luo, Haosu3 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2016-01-04 |
| 卷号 | 108期号:1 |
| 英文摘要 | Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here, we investigate resonant magnetization dynamics in ferromagnet/ferroelectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate. (C) 2016 AIP Publishing LLC. |
| WOS标题词 | Science & Technology ; Physical Sciences |
| 类目[WOS] | Physics, Applied |
| 研究领域[WOS] | Physics |
| 关键词[WOS] | MAGNETOELECTRIC DEVICES ; ROOM-TEMPERATURE ; ATOMIC LAYERS ; VOLTAGE ; MULTIFERROICS ; RESONANCE ; MEMORY ; FILMS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000374313000040 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23059]  |
| 专题 | 上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文 |
| 作者单位 | 1.Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA 2.Xi An Jiao Tong Univ, Elect Mat Res Lab, Xian 710049, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China 4.Northeastern Univ, Dept Chem, Boston, MA 02115 USA 5.Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA |
| 推荐引用方式 GB/T 7714 | Nan, Tianxiang,Emori, Satoru,Peng, Bin,et al. Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching[J]. APPLIED PHYSICS LETTERS,2016,108(1). |
| APA | Nan, Tianxiang.,Emori, Satoru.,Peng, Bin.,Wang, Xinjun.,Hu, Zhongqiang.,...&Sun, Nian.(2016).Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching.APPLIED PHYSICS LETTERS,108(1). |
| MLA | Nan, Tianxiang,et al."Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching".APPLIED PHYSICS LETTERS 108.1(2016). |
入库方式： OAI收割
来源：上海硅酸盐研究所
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