Growth and characterization of yttrium iron garnet films on Si substrates by Chemical Solution Deposition (CSD) technique
文献类型：期刊论文
| 作者 | Guo, Xin1; Chen, Ying1; Wang, Genshui1; Zhang, Yuanyuan2; Ge, Jun1; Tang, Xiaodong2; Ponchel, Freddy3; Remiens, Denis3; Dong, Xianlin1 |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2016-06-25 |
| 卷号 | 671页码:234-237 |
| 关键词 | YIG films Chemical Solution Deposition Si substrates Magnetic performance |
| 英文摘要 | Yttrium Iron Garnet (YIG) films were prepared on Si substrates by Chemical Solution Deposition (CSD) technique using acetic acid and deionized water as solvents. Well-crystallized and crack-free YIG films were obtained when annealed at 750 degrees C and 850 degrees C respectively, showing a low surface roughness of several nanometers. When annealed at 750 degrees C for 30 min, the saturated magnetization (Ms) and coercive field (Hc) of YIG films were 0.121 emu/mm(3) (4 pi Ms = 1.52 kGs) and 7 Oe respectively, which were similar to that prepared by PLD technique. The peak-to-peak linewidth of ferromagnetic resonance (FMR) was 220 Oe at 9.10 GHz. The results demonstrated that CSD was an excellent technique to prepare high quality yttrium iron garnet (YIG) films on silicon, which could provide a lower-cost way for large-scale production on Si-based integrated devices. (C) 2016 Elsevier B.V. All rights reserved. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 研究领域[WOS] | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 关键词[WOS] | MAGNETIC-PROPERTIES ; THIN-FILMS ; YIG-FILMS ; FERRITES |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000371767900030 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23151]  |
| 专题 | 上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文 |
| 作者单位 | 1.Univ Chinese Acad Sci, Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, 1295 Dingxi Rd, Shanghai 200050, Peoples R China 2.E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R China 3.Univ Sci & Technol Lille, UMR CNRS 8520, Inst Elect Microelect & Nanotechnol IEMN DOAE, F-59652 Villeneuve Dascq, France |
| 推荐引用方式 GB/T 7714 | Guo, Xin,Chen, Ying,Wang, Genshui,et al. Growth and characterization of yttrium iron garnet films on Si substrates by Chemical Solution Deposition (CSD) technique[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,671:234-237. |
| APA | Guo, Xin.,Chen, Ying.,Wang, Genshui.,Zhang, Yuanyuan.,Ge, Jun.,...&Dong, Xianlin.(2016).Growth and characterization of yttrium iron garnet films on Si substrates by Chemical Solution Deposition (CSD) technique.JOURNAL OF ALLOYS AND COMPOUNDS,671,234-237. |
| MLA | Guo, Xin,et al."Growth and characterization of yttrium iron garnet films on Si substrates by Chemical Solution Deposition (CSD) technique".JOURNAL OF ALLOYS AND COMPOUNDS 671(2016):234-237. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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