Colossal permittivity and dielectric relaxation of (Li, In) Co-doped ZnO ceramics
文献类型：期刊论文
| 作者 | Huang, Dong1,2,3; Liu, Zhifu1; Li, Yongxiang1,2; Liu, Yun4 |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2017-03-25 |
| 卷号 | 698页码:200-206 |
| 关键词 | Colossal permittivity Dielectric relaxation Co-doped ZnO Oxygen vacancy |
| 英文摘要 | In this study, a colossal permittivity up to 3800 and a low dielectric loss of 0.11 at 1 kHz have been obtained from the (Li, In) co-doped ZnO ceramic [Zn(1-2x)(Li, In)(x)O] when x was 0.5%. Electric modulus spectroscopy and impedance analysis were used to investigate the origin of its high permittivity. Two relaxation peaks and a dielectric anomaly were observed in the temperature range of 293-363 K. According to the Debye relaxation theory, the low-and high-temperature relaxation peaks with activation energies of 0.09 eV and 0.29 eV, have been attributed to the hopping of singly and doubly charged oxygen vacancies, which are created by lithium and indium ions doping and oxygen deficiency during sintering process. After thermal treatment in an oxidizing atmosphere, the peaks related to the singly and doubly charged oxygen vacancies disappear and the permittivity reduces to similar to 460 at room-temperature. From the X-ray photoelectron spectra (XPS), the concentrations of oxygen vacancies decrease after the O-2-annealing process. The results reveal that the oxygen defects would be the main origin of the colossal permittivity of co-doped ZnO at room-temperature range. (C) 2016 Elsevier B.V. All rights reserved. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 研究领域[WOS] | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 关键词[WOS] | THIN-FILMS ; CONDUCTIVITY RELAXATION ; OXYGEN VACANCIES ; PHOTOLUMINESCENCE ; PERFORMANCE ; TRANSPORT ; BEHAVIOR |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000393586300029 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23408]  |
| 专题 | 上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 4.Australian Natl Univ, Res Sch Chem, Canberra, ACT 2601, Australia |
| 推荐引用方式 GB/T 7714 | Huang, Dong,Liu, Zhifu,Li, Yongxiang,et al. Colossal permittivity and dielectric relaxation of (Li, In) Co-doped ZnO ceramics[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,698:200-206. |
| APA | Huang, Dong,Liu, Zhifu,Li, Yongxiang,&Liu, Yun.(2017).Colossal permittivity and dielectric relaxation of (Li, In) Co-doped ZnO ceramics.JOURNAL OF ALLOYS AND COMPOUNDS,698,200-206. |
| MLA | Huang, Dong,et al."Colossal permittivity and dielectric relaxation of (Li, In) Co-doped ZnO ceramics".JOURNAL OF ALLOYS AND COMPOUNDS 698(2017):200-206. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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