Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells
文献类型：期刊论文
| 作者 | Yuan, ZC; Yang, YG; Wu, ZW; Bai, S; Xu, WD; Song, T; Gao, XY; Gao, F; Sun, BQ |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2016 |
| 卷号 | 8期号:50页码:34446-34454 |
| 关键词 | perovskite solar cells solvent retarding crystallization components separation film thickness |
| ISSN号 | 1944-8244 |
| 通讯作者 | Sun, BQ (reprint author), Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China. ; Gao, F (reprint author), Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden. ; Gao, XY (reprint author), Chinese Acad Sci, SSRF, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol,Shanghai Inst, Shanghai 201800, Peoples R China. |
| 英文摘要 | Device performance of organometal halide perovskite solar cells significantly depends on the quality and thickness of perovskite absorber films. However, conventional deposition methods often generate pinholes within similar to 300 nm-thick perovskite films, which are detrimental to the large area device manufacture. Here we demonstrated a simple solvent retarding process to deposit uniform pinhole free perovskite films with thicknesses up to similar to 800 nm. Solvent evaporation during the retarding process facilitated the components separation in the mixed halide perovskite precursors, and hence the final films exhibited pinhole free morphology and large grain sizes. In addition, the increased precursor concentration after solvent-retarding process led to thick perovskite films. Based on the uniform and thick perovskite films prepared by this convenient process, a champion device efficiency up to 16.8% was achieved. We believe that this simple deposition procedure for high quality perovskite films around micrometer thickness has a great potential in the application of large area perovskite solar cells and other optoelectronic devices. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000390728900033 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/26431]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Yuan, ZC,Yang, YG,Wu, ZW,et al. Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2016,8(50):34446-34454. |
| APA | Yuan, ZC.,Yang, YG.,Wu, ZW.,Bai, S.,Xu, WD.,...&Sun, BQ.(2016).Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells.ACS APPLIED MATERIALS & INTERFACES,8(50),34446-34454. |
| MLA | Yuan, ZC,et al."Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells".ACS APPLIED MATERIALS & INTERFACES 8.50(2016):34446-34454. |
入库方式： OAI收割
来源：上海应用物理研究所
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