Compensated Semimetal LaSb with Unsaturated Magnetoresistance
文献类型：期刊论文
| 作者 | Zeng, LK; Lou, R; Wu, DS; Xu, QN; Guo, PJ; Kong, LY; Zhong, YG; Ma, JZ; Fu, BB; Richard, P |
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 出版日期 | 2016 |
| 卷号 | 117期号:12页码:- |
| ISSN号 | 0031-9007 |
| 通讯作者 | Wang, SC (reprint author), Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China. ; Wang, SC (reprint author), Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China. |
| 英文摘要 | By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits near-quadratic extremely large magnetoresistance(XMR) without any sign of saturation at magnetic fields as high as 40 T. We clearly resolve one spherical and one intersecting-ellipsoidal hole Fermi surfaces (FSs) at the Brillouin zone (BZ) center G and one ellipsoidal electron FS at the BZ boundary X. The hole and electron carriers calculated from the enclosed FS volumes are perfectly compensated, and the carrier compensation is unaffected by temperature. We further reveal that LaSb is topologically trivial but shares many similarities with the Weyl semimetal TaAs family in the bulk electronic structure. Based on these results, we have examined the mechanisms that have been proposed so far to explain the near-quadratic XMR in semimetals. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000383344000019 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/26454]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Zeng, LK,Lou, R,Wu, DS,et al. Compensated Semimetal LaSb with Unsaturated Magnetoresistance[J]. PHYSICAL REVIEW LETTERS,2016,117(12):-. |
| APA | Zeng, LK.,Lou, R.,Wu, DS.,Xu, QN.,Guo, PJ.,...&Ding, H.(2016).Compensated Semimetal LaSb with Unsaturated Magnetoresistance.PHYSICAL REVIEW LETTERS,117(12),-. |
| MLA | Zeng, LK,et al."Compensated Semimetal LaSb with Unsaturated Magnetoresistance".PHYSICAL REVIEW LETTERS 117.12(2016):-. |
入库方式： OAI收割
来源：上海应用物理研究所
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