Effect of Ar+ ion post-irradiation on crystal structure, magnetic behavior and optical band gap of Co-implanted ZnO wafers
文献类型：期刊论文
| 作者 | Xu, NN; Li, GP; Lin, QL; Liu, H; Bao, LM |
| 刊名 | SOLID STATE COMMUNICATIONS
 |
| 出版日期 | 2016 |
| 卷号 | 248页码:65-67 |
| 关键词 | ZnO Co implantation Ar post-irradiation M-S Band gap |
| ISSN号 | 0038-1098 |
| 通讯作者 | Li, GP (reprint author), Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China. |
| 英文摘要 | Single crystals wurtzite ZnO with (001) orientation were implanted with Co+ ions at room temperature (RT). To tune their magnetic behavior as well as the band gap of the implanted wafers, Ar+ ion post-irradiation (PI) was performed using the calculated energy and ion dose. The formed Co clusters present in the high dose Co-implanted ZnO wafer were observed to be absent after the PI, which is quite different from the low dose doped one. It is found that all the implanted samples showed a giant magnetic moment and a narrowing optical band gap, and that the post-irradiated ones exhibited an even further redshifted absorption edge and ferromagnetic behavior but with saturation magnetization (M-S) drastically decreased. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000385005700011 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/26485]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Xu, NN,Li, GP,Lin, QL,et al. Effect of Ar+ ion post-irradiation on crystal structure, magnetic behavior and optical band gap of Co-implanted ZnO wafers[J]. SOLID STATE COMMUNICATIONS,2016,248:65-67. |
| APA | Xu, NN,Li, GP,Lin, QL,Liu, H,&Bao, LM.(2016).Effect of Ar+ ion post-irradiation on crystal structure, magnetic behavior and optical band gap of Co-implanted ZnO wafers.SOLID STATE COMMUNICATIONS,248,65-67. |
| MLA | Xu, NN,et al."Effect of Ar+ ion post-irradiation on crystal structure, magnetic behavior and optical band gap of Co-implanted ZnO wafers".SOLID STATE COMMUNICATIONS 248(2016):65-67. |
入库方式： OAI收割
来源：上海应用物理研究所
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