热门
Evolution of dislocation loops in He ion irradiated nickel under different temperature
文献类型：期刊论文
| 作者 | Chen, HC; Lui, RD; Ren, CL; Huang, HF; Li, JJ; Lei, GH; Xue, WD; Wang, WX; Huang, Q; Li, DH |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2016 |
| 卷号 | 120期号:12页码:- |
| ISSN号 | 0021-8979 |
| 通讯作者 | Yan, L ; Zhou, XT (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China. |
| 英文摘要 | The effect of temperature on the evolution of loops in nickel was investigated under 30 keV He_ irradiation. The size, Burgers vector, and nature of loops were analyzed by a transmission electron microscope (TEM). In addition, the Weibull statistical analysis was introduced to analyze the size distributions of the loops. The TEM results indicate that the sizes of loops increase with increasing irradiation temperature, where they are mainly in the range of 10-30, 20-50, and 30-80 nm at 300, 400, and 500 degrees C, respectively. In the irradiation temperature range of 300-500 degrees C, the size distributions of loops fit Weibull distribution very well, which suggests that the loops tend to grow larger and/ or be merged. In addition, almost all the loops formed under He+ irradiation are the interstitial loops with Burgers vectors b/ a 2 h110i, which is ascribed to the assistance of the He atom on the formation process of loops. Published by AIP Publishing. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000385560700061 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/26501]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Chen, HC,Lui, RD,Ren, CL,et al. Evolution of dislocation loops in He ion irradiated nickel under different temperature[J]. JOURNAL OF APPLIED PHYSICS,2016,120(12):-. |
| APA | Chen, HC.,Lui, RD.,Ren, CL.,Huang, HF.,Li, JJ.,...&Zhou, XT.(2016).Evolution of dislocation loops in He ion irradiated nickel under different temperature.JOURNAL OF APPLIED PHYSICS,120(12),-. |
| MLA | Chen, HC,et al."Evolution of dislocation loops in He ion irradiated nickel under different temperature".JOURNAL OF APPLIED PHYSICS 120.12(2016):-. |
入库方式： OAI收割
来源：上海应用物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。