Force Drift in Force Mode Dip-Pen Nanolithography
文献类型：期刊论文
| 作者 | Yang, HJ; Zhang, C; Zhang, JJ; Zhang, DH; Hu, J; Han, ZK; Wang, HB; Hou, Z |
| 刊名 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
 |
| 出版日期 | 2016 |
| 卷号 | 16期号:7页码:7030-7036 |
| 关键词 | Dip-Pen Nanolithography (DPN) Atomic Force Microscopy (AFM) Force Drift |
| ISSN号 | 1533-4880 |
| 通讯作者 | Hou, Z (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Div Interfacial Water, Shanghai 201800, Peoples R China. ; Hou, Z (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China. ; Wang, HB (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Ctr Terahertz Technol Res, Chongqing 400714, Peoples R China. ; Wang, HB (reprint author), Univ Melbourne, Sch Chem, Pakville, Vic 3010, Australia. |
| 英文摘要 | Dip-pen nanolithography (DPN) is a widely employed technique in fabricating micro-and nanopatterns composed of biological molecules or other chemical materials. Force drift, a key factor affecting the force control, therefore the performance of DPN, is commonly happened in DPN. However, the underlying mechanism of force drift is not well understood yet. In this work, based on analyzing the force curve and tapping mode (TM) deflection signals varying with dwell time (i.e., the 'surface delay' period), the force drift during force mode dip-pen nanolithography (FMDPN) was studied in depth. For an open-loop atomic force microscope (AFM) scanner the force drift is about 30% of its preset value on a soft polydimethylsiloxane (PDMS) substrate while it can reach 400% on a rigid silicon wafer during the dwell time of 2 seconds. The creep effect of the scanner in the z direction determines the force drift and the thermal drift of AFM system is negligible in comparison with the preset loading force when the AFM system is stabilized. For a closed-loop scanner the loading force can nearly keep constant on either a soft PDMS substrate or a rigid silicon wafer during the whole dwell time due to the compensation for the creep effect of piezoelectric tube in the z direction of the AFM scanner. This study is helpful for properly employing DPN technique to fabricate micro-and nano-patterned structures on solid substrates. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000387100400058 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/26513]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Yang, HJ,Zhang, C,Zhang, JJ,et al. Force Drift in Force Mode Dip-Pen Nanolithography[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2016,16(7):7030-7036. |
| APA | Yang, HJ.,Zhang, C.,Zhang, JJ.,Zhang, DH.,Hu, J.,...&Hou, Z.(2016).Force Drift in Force Mode Dip-Pen Nanolithography.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,16(7),7030-7036. |
| MLA | Yang, HJ,et al."Force Drift in Force Mode Dip-Pen Nanolithography".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 16.7(2016):7030-7036. |
入库方式： OAI收割
来源：上海应用物理研究所
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