High-energy electron radiography of microstructures in a dense material
文献类型:期刊论文
作者 | Qi, R; Tian, Y; Zhang, GQ; Bai, YF; Zhou, SY; Zeng, YS; Sun, HY; Wang, XT; Li, XY; Liu, JS |
刊名 | EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
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出版日期 | 2016 |
卷号 | 75期号:3页码:- |
ISSN号 | 1286-0042 |
通讯作者 | Tian, Y (reprint author), Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China. |
英文摘要 | This study presents experimental and numerical results for the high-energy electron-beam radiography of two types of microstructures in a dense material. A copper step target with 1- and 4-mm-thick steps is irradiated by an electron beam with an energy of 150 MeV. A peak and valley structure with 285 mu m width was observed in 4-mu m step target experiment, as indicated by the "valley to peak" feature at the 4-mm step boundary caused by multiple scattering. In a gap-target experiment, the rate of increase of the penetrant-electron counts with a gap width of 500-900 mu m grows from 1.5 to 2.5 times the background counts. Consequently, the width of the gaps can be approximately deduced from the ratio of the penetrant-electron counts combined with the peak value. The features observed in the experiment are reproduced by a Monte Carlo-FLUKE code with parameters similar to those used experimentally. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000387237700005 |
源URL | [http://ir.sinap.ac.cn/handle/331007/26530] ![]() |
专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
推荐引用方式 GB/T 7714 | Qi, R,Tian, Y,Zhang, GQ,et al. High-energy electron radiography of microstructures in a dense material[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2016,75(3):-. |
APA | Qi, R.,Tian, Y.,Zhang, GQ.,Bai, YF.,Zhou, SY.,...&Liu, JS.(2016).High-energy electron radiography of microstructures in a dense material.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,75(3),-. |
MLA | Qi, R,et al."High-energy electron radiography of microstructures in a dense material".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 75.3(2016):-. |
入库方式: OAI收割
来源:上海应用物理研究所
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