Cu8GeSe6-based thermoelectric materials with an argyrodite structure
文献类型：期刊论文
| 作者 | Jiang, Binbin1,2; Qiu, Pengfei1; Eikeland, Espen3,4; Chen, Hongyi1,2; Song, Qingfeng1,2; Ren, Dudi1; Zhang, Tiansong1; Yang, Jiong5; Iversen, Bo Brummerstedt3,4; Shi, Xun1 |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY C
 |
| 出版日期 | 2017 |
| 卷号 | 5期号:4页码:943-952 |
| 英文摘要 | Recently, liquid-like superionic thermoelectric materials have attracted great attention due to their extremely low lattice thermal conductivity and high thermoelectric figure of merit (ZT). Argyrodite-type compounds are typical superionic semiconductors with two independent structural units that can be used to separately tune electrical and thermal transport properties. In this work, we report that Cu8GeSe6 with an argyrodite structure is a new class of thermoelectric materials with extremely low lattice thermal conductivity. The presence of two independent structural units in Cu8GeSe6 provides the possibility of greatly improving its electrical transport properties while maintaining ultralow lattice thermal conductivity. By alloying Ag and Te in Cu8GeSe6, the ZT values are significantly improved to above unity at 800 K in Cu7.6Ag0.4GeSe5.1Te0.9, comparable with the best superionic liquid-like thermoelectric materials. The ultralow thermal conductivity is mainly attributed to the weak chemical bonding between Cu atoms and the rigid [GeSe6] sublattice. |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| 类目[WOS] | Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Materials Science ; Physics |
| 关键词[WOS] | LATTICE THERMAL-CONDUCTIVITY ; HIGH-TEMPERATURE ; PERFORMANCE ; EFFICIENCY ; FIGURE ; MERIT ; SEMICONDUCTORS ; CRYSTALS ; ELEMENTS ; DESIGN |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000395424000021 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23585]  |
| 专题 | 上海硅酸盐研究所_高性能陶瓷和超微结构国家重点实验室_期刊论文 |
| 作者单位 | 1.Shanghai Inst Ceram, Chinese Acad Sci, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Aarhus Univ, Dept Chem, Ctr Mat Crystallog, Aarhus C, Denmark 4.INANO, Aarhus C, Denmark 5.Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China 6.Shanghai Inst Mat Genome, Shanghai, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jiang, Binbin,Qiu, Pengfei,Eikeland, Espen,et al. Cu8GeSe6-based thermoelectric materials with an argyrodite structure[J]. JOURNAL OF MATERIALS CHEMISTRY C,2017,5(4):943-952. |
| APA | Jiang, Binbin.,Qiu, Pengfei.,Eikeland, Espen.,Chen, Hongyi.,Song, Qingfeng.,...&Chen, Lidong.(2017).Cu8GeSe6-based thermoelectric materials with an argyrodite structure.JOURNAL OF MATERIALS CHEMISTRY C,5(4),943-952. |
| MLA | Jiang, Binbin,et al."Cu8GeSe6-based thermoelectric materials with an argyrodite structure".JOURNAL OF MATERIALS CHEMISTRY C 5.4(2017):943-952. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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