Growth of Hexagonal AlN Crystalline Microrod by Physical Vapor Transport Method
文献类型：期刊论文
| 作者 | Wang Hua-Jie1,2; Liu Xue-Chao1; Kong Hai-Kuan1; Xin Jun1; Gao Pan1; Zhuo Shi-Yi1; Shi Er-Wei1 |
| 刊名 | JOURNAL OF INORGANIC MATERIALS
 |
| 出版日期 | 2017-02-01 |
| 卷号 | 32期号:2页码:215-218 |
| 关键词 | III-V semiconductors aluminum nitride hexagonal microrod physical vapor transport |
| 英文摘要 | Hexagonal aluminium nitride (AIN) microrods with high crystalline quality were grown by physical vapor transport (PVT) method at low growth temperature between 1700 and 1850 degrees C. The length of as-grown microrod is around 1 cm, and the width between 200-400 mu m. The microrod exhibits typical hexagonal geometrical shape with pale yellow color under optical microscopy. Scanning electron microscope (SEM) and atomic force microscope (AFM) images show each microrod with closely arranged step waviness, of which the step interval is 2-4 mu m and the height several nanometers. Raman spectrum characterization showed characteristic peaks of high crystalline AlN. The rod-like structure is attributed to slow growth velocity at lower crystalline temperature, enabling Al and N atoms having enough time to move to the lower energy site and to form heiagonal microrod along < 0001 > direction. High quality hexagonal AlN microrod is an enrichment to one-dimensional semiconductor materials. Data from this study suggest that, by further study on size and impurity control, high performance miniaturized opto-electronic device is hopeful to be achieved. |
| WOS标题词 | Science & Technology ; Technology |
| 类目[WOS] | Materials Science, Ceramics |
| 研究领域[WOS] | Materials Science |
| 关键词[WOS] | RAMAN-SCATTERING ; WHISKERS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000394920800017 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23717]  |
| 专题 | 上海硅酸盐研究所_人工晶体研究中心_期刊论文 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Hua-Jie,Liu Xue-Chao,Kong Hai-Kuan,et al. Growth of Hexagonal AlN Crystalline Microrod by Physical Vapor Transport Method[J]. JOURNAL OF INORGANIC MATERIALS,2017,32(2):215-218. |
| APA | Wang Hua-Jie.,Liu Xue-Chao.,Kong Hai-Kuan.,Xin Jun.,Gao Pan.,...&Shi Er-Wei.(2017).Growth of Hexagonal AlN Crystalline Microrod by Physical Vapor Transport Method.JOURNAL OF INORGANIC MATERIALS,32(2),215-218. |
| MLA | Wang Hua-Jie,et al."Growth of Hexagonal AlN Crystalline Microrod by Physical Vapor Transport Method".JOURNAL OF INORGANIC MATERIALS 32.2(2017):215-218. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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