Effect of Residual Stress on Magnetic and Electrical Transport Properties in SrRuO3 Thin Films
文献类型：期刊论文
| 作者 | Zhu Ming-Kang1,2; Dong Xian-Lin2; Chen Yin2; Ding Gue-Ji1; Wang Gen-Shui2 |
| 刊名 | JOURNAL OF INORGANIC MATERIALS
 |
| 出版日期 | 2017 |
| 卷号 | 32期号:1页码:75-80 |
| 关键词 | SrRuO3 orientation residual stress magnetic properties transport properties |
| 英文摘要 | A series of SrRuO3 (SRO) thin films with preferential orientations were grown on SrTiO3 (STO) and Si substrates respectively by radio frequency (RF) magnetron sputtering technique. XRD results show that STO-based SRO thin films are epitaxial which differ from the one-axis orineted Si-based films. Residual stress type of the deposited films and effect of the stress on magnetic and electrical transport properties were systematically analyzed and summarized. STO-based SRO films suffer from compressive stress due to the lattice and thermal mismatch, while the Si-based films are subjected to tensile stress which is only derived from the thermal mismatch. The compressive stress promotes the Curie temperature (T-C) of (001)-oriented SRO films, but reduces the T-C of (110)-oriented SRO films, which may be due to the different states of rotation and tilt of RuO6 octahedron. Besides, the (001)-oriented SRO films possess higher T-C than the (110)-oriented SRO films all along. The results of temperature versus resistivity measurements reveal that residual resistivity ratio (RRR) of (001)-oriented SRO films is higher than that of (110)-oriented SRO films which deposited on the same substrate. Moreover, the temperature of metal-insulator transition (T-MI) increases from 16 K to 32 K while the temperature dependence of resistivity is suppressed by the tensile stress. |
| WOS标题词 | Science & Technology ; Technology |
| 类目[WOS] | Materials Science, Ceramics |
| 研究领域[WOS] | Materials Science |
| 关键词[WOS] | STRAIN |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000394920700012 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23566]  |
| 专题 | 上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文 |
| 作者单位 | 1.Shanghai Univ, Sch Environm & Chem Engn, Shanghai 200436, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu Ming-Kang,Dong Xian-Lin,Chen Yin,et al. Effect of Residual Stress on Magnetic and Electrical Transport Properties in SrRuO3 Thin Films[J]. JOURNAL OF INORGANIC MATERIALS,2017,32(1):75-80. |
| APA | Zhu Ming-Kang,Dong Xian-Lin,Chen Yin,Ding Gue-Ji,&Wang Gen-Shui.(2017).Effect of Residual Stress on Magnetic and Electrical Transport Properties in SrRuO3 Thin Films.JOURNAL OF INORGANIC MATERIALS,32(1),75-80. |
| MLA | Zhu Ming-Kang,et al."Effect of Residual Stress on Magnetic and Electrical Transport Properties in SrRuO3 Thin Films".JOURNAL OF INORGANIC MATERIALS 32.1(2017):75-80. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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