Colossal permittivity with ultralow dielectric loss in In plus Ta co-doped rutile TiO2
文献类型：期刊论文
| 作者 | Dong, Wen1; Hu, Wanbiao1; Frankcombe, Terry J.1,2; Chen, Dehong1; Zhou, Chao3; Fu, Zhenxiao3; Candido, Ladir4; Hai, Guoqiang5; Chen, Hua6; Li, Yongxiang7 |
| 刊名 | JOURNAL OF MATERIALS CHEMISTRY A
 |
| 出版日期 | 2017 |
| 卷号 | 5期号:11页码:5436-5441 |
| 英文摘要 | Colossal permittivity (CP) materials have many important applications in electronics but their development has generally been hindered due to the difficulty in achieving a relatively low dielectric loss. In this work, we report an In + Ta co-doped TiO2 material system that manifests high dielectric permittivity and low dielectric loss based on the electron-pinned defect-dipole design. The dielectric loss can be reduced down to e.g. 0.002 at 1 kHz, giving high performance, low temperature dependent dielectric properties i.e. 3(r) > 10(4) with tan delta < 0.02 in a broad temperature range of 50-400 K. Density functional theory calculations coupled with the defect analysis uncover that electron-pinned defect dipoles (EPDDs), in the form of highly stable triangle-diamond and/or triangle-linear dopant defect clusters with well-defined relative positions for Ti reduction, are also present in the host material for the CP observed. Such a high-performance dielectric material would thus help for practical applications and points to further discovery of promising new materials of this type. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Chemistry, Physical ; Energy & Fuels ; Materials Science, Multidisciplinary |
| 研究领域[WOS] | Chemistry ; Energy & Fuels ; Materials Science |
| 关键词[WOS] | CACU3TI4O12 ; CERAMICS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000397605300022 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23672]  |
| 专题 | 上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文 |
| 作者单位 | 1.Australian Natl Univ, Res Sch Chem, Canberra, ACT 2601, Australia 2.Univ New South Wales, Sch Phys Environm & Math Sci, Canberra, ACT 2601, Australia 3.Fenghua Adv Technol Holding Co Ltd, Zhaoqing, Guangdong, Peoples R China 4.Univ Fed Goias, Inst Fis, BR-74001970 Goiania, Go, Brazil 5.Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil 6.Australian Natl Univ, Ctr Adv Microscopy, Canberra, ACT 2601, Australia 7.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Dong, Wen,Hu, Wanbiao,Frankcombe, Terry J.,et al. Colossal permittivity with ultralow dielectric loss in In plus Ta co-doped rutile TiO2[J]. JOURNAL OF MATERIALS CHEMISTRY A,2017,5(11):5436-5441. |
| APA | Dong, Wen.,Hu, Wanbiao.,Frankcombe, Terry J..,Chen, Dehong.,Zhou, Chao.,...&Liu, Yun.(2017).Colossal permittivity with ultralow dielectric loss in In plus Ta co-doped rutile TiO2.JOURNAL OF MATERIALS CHEMISTRY A,5(11),5436-5441. |
| MLA | Dong, Wen,et al."Colossal permittivity with ultralow dielectric loss in In plus Ta co-doped rutile TiO2".JOURNAL OF MATERIALS CHEMISTRY A 5.11(2017):5436-5441. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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