Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals
文献类型：期刊论文
| 作者 | Ye, Le1,2; Li, Huanying2; Wang, Chao2; Shi, Jian2; Chen, Xiaofeng2; Wang, Zhongqing3; Huang, Yuefeng3; Xu, Jiayue1; Ren, Guohao2 |
| 刊名 | OPTICAL MATERIALS
 |
| 出版日期 | 2017-02-01 |
| 卷号 | 64页码:121-125 |
| 关键词 | Scintillator GdI3 Single crystal growth Bridgman technique Ce3+ luminescence |
| 英文摘要 | The growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals were reported in this paper. These GdI3:chi%Ce (chi = 0, 1, 2) crystals were grown by the vertical Bridgman growth technique in evacuated quartz crucibles. X-ray excited optical luminescence spectra of GdI3:Ce exhibit a broad emission band (450 nm-650 nm) peaking at 520 nm corresponding to 5d(1)-> 4f(1) transition of Ce3+ while the undoped GdI3 crystal consists of a broad band (400 nm-600 nm) and several sharp lines peaking at 462 nm, 482 nm, 492 nm, 549 nm, 579 nm owing to the impurities ions and defects. The excitation spectra of Ce3+ doped GdI3 consist of two broad bands between 300 nm and 500 nm corresponding to 4f(1)-> 5d(1) absorption of Ce3+. The other absorption peaking at 262 nm in the spectrum of GdI3:2%Ce is assigned to band-to-band exciton transition. The excitation spectrum of undoped GdI3 contains a flat absorption band from 330 to 370 nm and a broad band between 390 and 450 nm peaking at 414 nm corresponding to the absorption of the unintentionally doped Ce3+, Dy3+, Ho3+ impurities and other defects. The emission spectrum of undoped GdI3 under 332 nm excitation has the identical line peaks with the spectrum measured under X-ray excitation. The emission spectra of GdI3:2%Ce and GdI3:1%Ce show a broad band in the range of 450-750 nm with the maximum at 550 nm corresponding to 5d(1)-> 4f(1) transitions of Ce3+ ion. The GdI3, GdI3:1%Ce and GdI3:2%Ce show fast principle decay time constant 73 ns, 69 ns and 58 ns respectively, besides, the undoped also shows a slow decay constant 325 ns which doesn't appear in Ce3+-doped GdI3 crystal. The energy resolutions of GdI3:chi%Ce (chi = 1, 2) measured at 662 KeV are about 3%-5% and the undoped GdI3 is 13.3%. (C) 2016 Elsevier B.V. All rights reserved. |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| 类目[WOS] | Materials Science, Multidisciplinary ; Optics |
| 研究领域[WOS] | Materials Science ; Optics |
| 关键词[WOS] | ENERGY ; EMISSION |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000394635200020 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23705]  |
| 专题 | 上海硅酸盐研究所_中试基地_期刊论文 |
| 作者单位 | 1.Shanghai Inst Technol, Sch Mat Sci & Engn, Shanghai 200235, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ye, Le,Li, Huanying,Wang, Chao,et al. Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals[J]. OPTICAL MATERIALS,2017,64:121-125. |
| APA | Ye, Le.,Li, Huanying.,Wang, Chao.,Shi, Jian.,Chen, Xiaofeng.,...&Ren, Guohao.(2017).Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals.OPTICAL MATERIALS,64,121-125. |
| MLA | Ye, Le,et al."Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals".OPTICAL MATERIALS 64(2017):121-125. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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