Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy
文献类型：会议论文
| 作者 | Liu L; Chen NF(陈诺夫) ; Gao FB; Yin ZQ; Cui M; Bai YM; Zhang XW
|
| 出版日期 | 2008 |
| 会议名称 | Solid State Lighting and Solar Energy Technologies |
| 会议日期 | November 12, 2007 - November 14, 2007 |
| 会议地点 | Beijing, China |
| 关键词 | GaInAsSb GaSb LPE Segregation coefficient Thermophotovoltaic cell |
| 中文摘要 | GaSb based cells as receivers in thermophotovoltaic system have attracted great interest and been extensively studied in the recent 15 years. Although nowadays the manufacturing technologies have made a great progress, there are still some details need to make a further study. In this paper, undoped and doped GaSb layers were grown on n-GaSb (100) substrates from both Ga-rich and Sb-rich solutions using liquid phase epitaxy (LPE) technique. The nominal segregation coefficients k of intentional doped Zn were 1.4 and 8.8 determined from the two kinds of GaSb epitaxial layers. Additionally, compared with growing from Ga-rich solutions, the growing processes from Sb-rich solutions were much easier to control and the surface morphologies of epitaxial layers were smoother. Furthermore, in order to broaden the absorbing edge, Ga 1-xInxAsySb1-y quaternary alloys were grown on both GaSb and InAs substrates from In-rich solutions, under different temperature respectively. |
| 收录类别 | EI |
| 会议网址 | http://dx.doi.org/10.1117/12.755597 |
| 会议录 | Proceedings of SPIE - The International Society for Optical Engineering
 |
| 语种 | 英语 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/60316]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Liu L,Chen NF,Gao FB,et al. Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy[C]. 见:Solid State Lighting and Solar Energy Technologies. Beijing, China. November 12, 2007 - November 14, 2007.http://dx.doi.org/10.1117/12.755597. |
入库方式： OAI收割
来源：力学研究所
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