High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer
文献类型：期刊论文
| 作者 | Xu, Leilei1,2; Li, Xiaomin1; Zhu, Qiuxiang1; Xu, Xiaoke1,3; Qin, Meng1,2 |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2017-04-15 |
| 卷号 | 193页码:240-243 |
| 关键词 | Ferroelectrics Bismuth ferrite Bi-layer buffer Epitaxial growth GaN integration |
| 英文摘要 | The highly (111)-oriented BiFe0.95Mn0.05O3 (BFMO) films owning exellent ferroelectric performance have been epitaxially grown on (0002) GaN substrates with La0.7Sr0.3MnO3 (LSMO)/TiO2 bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO2 bi-layer buffer, the lattice mismatch between perovskite (111) BFMO and wurtzite (0002) GaN was miraculously decreased from 12.4% to 1.4%. The remnant ferroelectric polarization and coercive field of the BFMO (111) film were determined to be 115 mu C/ cm(2) and 450 kV/cm, respectively. Compared with the BFMO film deposited on the bare GaN substrate, the remnant ferroelectric polarization was enhanced by 92%. The piezoresponse force microscopy (PFM) image further confirmed that the BFMO (111) film owned perfect ferroelectric switching properties. (C) 2017 Elsevier B.V. All rights reserved. |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| 类目[WOS] | Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Materials Science ; Physics |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000395842600063 |
| 源URL | [http://ir.sic.ac.cn/handle/331005/23758]  |
| 专题 | 上海硅酸盐研究所_高性能陶瓷和超微结构国家重点实验室_期刊论文 |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China 3.Shanghai Inst Technol, Sch Mat Sci & Engn, 100 Haiquan Rd, Shanghai 201418, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, Leilei,Li, Xiaomin,Zhu, Qiuxiang,et al. High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer[J]. MATERIALS LETTERS,2017,193:240-243. |
| APA | Xu, Leilei,Li, Xiaomin,Zhu, Qiuxiang,Xu, Xiaoke,&Qin, Meng.(2017).High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer.MATERIALS LETTERS,193,240-243. |
| MLA | Xu, Leilei,et al."High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer".MATERIALS LETTERS 193(2017):240-243. |
入库方式： OAI收割
来源：上海硅酸盐研究所
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