中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer

文献类型:期刊论文

作者Xu, Leilei1,2; Li, Xiaomin1; Zhu, Qiuxiang1; Xu, Xiaoke1,3; Qin, Meng1,2
刊名MATERIALS LETTERS
出版日期2017-04-15
卷号193页码:240-243
关键词Ferroelectrics Bismuth ferrite Bi-layer buffer Epitaxial growth GaN integration
英文摘要The highly (111)-oriented BiFe0.95Mn0.05O3 (BFMO) films owning exellent ferroelectric performance have been epitaxially grown on (0002) GaN substrates with La0.7Sr0.3MnO3 (LSMO)/TiO2 bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO2 bi-layer buffer, the lattice mismatch between perovskite (111) BFMO and wurtzite (0002) GaN was miraculously decreased from 12.4% to 1.4%. The remnant ferroelectric polarization and coercive field of the BFMO (111) film were determined to be 115 mu C/ cm(2) and 450 kV/cm, respectively. Compared with the BFMO film deposited on the bare GaN substrate, the remnant ferroelectric polarization was enhanced by 92%. The piezoresponse force microscopy (PFM) image further confirmed that the BFMO (111) film owned perfect ferroelectric switching properties. (C) 2017 Elsevier B.V. All rights reserved.
WOS标题词Science & Technology ; Technology ; Physical Sciences
类目[WOS]Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]Materials Science ; Physics
收录类别SCI
语种英语
WOS记录号WOS:000395842600063
源URL[http://ir.sic.ac.cn/handle/331005/23758]  
专题上海硅酸盐研究所_高性能陶瓷和超微结构国家重点实验室_期刊论文
作者单位1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China
2.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China
3.Shanghai Inst Technol, Sch Mat Sci & Engn, 100 Haiquan Rd, Shanghai 201418, Peoples R China
推荐引用方式
GB/T 7714
Xu, Leilei,Li, Xiaomin,Zhu, Qiuxiang,et al. High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer[J]. MATERIALS LETTERS,2017,193:240-243.
APA Xu, Leilei,Li, Xiaomin,Zhu, Qiuxiang,Xu, Xiaoke,&Qin, Meng.(2017).High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer.MATERIALS LETTERS,193,240-243.
MLA Xu, Leilei,et al."High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer".MATERIALS LETTERS 193(2017):240-243.

入库方式: OAI收割

来源:上海硅酸盐研究所

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