中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
In-situ stress suppression of hydrogenated a-CNx film prepared via Ar gas introduction

文献类型:期刊论文

作者Wang, Qi1; He, Deyan1; Zhang JY(张俊彦)2
刊名Surface and Interface Analysis
出版日期2017
卷号49期号:5页码:370-375
关键词amorphous carbon carbon nitride films stress Raman
ISSN号0142-2421
通讯作者Wang, Qi
英文摘要

Evolution of hydrogenated amorphous carbon nitride films was investigated with an introduction of Ar gas in the deposition. The results showed that compressive stress of the films decreased versus an increase of Ar flow rate. Especially, at an Ar flow rate of 5 sccm the film exhibited lower compressive stress, higher hardness and lower root-mean-square (rms) roughness than the films deposited without Ar gas introduction. Structural analysis showed that the films with higher hardness, low compressive stress and lower rms roughness had relatively high sp2 and nitrogen content. It was attributed to the assistance of Ar plasma, which can cause N atom to enter graphite ring easily and form curved graphite microstructure.

学科主题材料科学与物理化学
收录类别SCI
语种英语
WOS记录号WOS:000398685400002
源URL[http://210.77.64.217/handle/362003/21742]  
专题兰州化学物理研究所_先进润滑与防护材料研究发展中心
兰州化学物理研究所_固体润滑国家重点实验室
作者单位1.Lanzhou Univ, Sch Phys, Lanzhou 730000, Peoples R China
2.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714
Wang, Qi,He, Deyan,Zhang JY. In-situ stress suppression of hydrogenated a-CNx film prepared via Ar gas introduction[J]. Surface and Interface Analysis,2017,49(5):370-375.
APA Wang, Qi,He, Deyan,&Zhang JY.(2017).In-situ stress suppression of hydrogenated a-CNx film prepared via Ar gas introduction.Surface and Interface Analysis,49(5),370-375.
MLA Wang, Qi,et al."In-situ stress suppression of hydrogenated a-CNx film prepared via Ar gas introduction".Surface and Interface Analysis 49.5(2017):370-375.

入库方式: OAI收割

来源:兰州化学物理研究所

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