Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Zhou, SX (Zhou, Shuxing); Qi, M (Qi, Ming); Ai, LK (Ai, Likun); Wang, SM (Wang, Shumin); Xu, AH (Xu, Anhuai); Guo, Q (Guo, Qi)
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| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2017 |
| 卷号 | 56期号:3 |
| 英文摘要 | The effects of Bi flux and In/Ga ratio on Bi incorporation and electrical properties of InGaAsBi grown by gas source molecular beam epitaxy were systematically studied. It is found that use of a low In/Ga ratio has an enhancement effect on the incorporation of Bi and its content increases linearly with Bi flux until reach a saturation. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but does not degrade the electron mobility for the Bi content up to 6.2%. Up to 7.5% of Bi incorporation has been confirmed by Rutherford backscattering spectroscopy (RBS) and a maximum electron mobility of 5600 cm(2)& V-1.s(-1) at room temperature was achieved in InGaAsBi with x(Bi) = 6.2%, which is the highest value reported in InGaAsBi with x(Bi) > 5%. |
| WOS记录号 | WOS:000395890700001 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4788]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | 1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 3.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden |
| 推荐引用方式 GB/T 7714 | Zhou, SX ,Qi, M ,Ai, LK ,et al. Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2017,56(3). |
| APA | Zhou, SX ,Qi, M ,Ai, LK ,Wang, SM ,Xu, AH ,&Guo, Q .(2017).Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy.JAPANESE JOURNAL OF APPLIED PHYSICS,56(3). |
| MLA | Zhou, SX ,et al."Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy".JAPANESE JOURNAL OF APPLIED PHYSICS 56.3(2017). |
入库方式： OAI收割
来源：新疆理化技术研究所
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