Broadband infrared luminescence from bismuth-doped GeS2-Ga2S3 chalcogenide glasses
文献类型：期刊论文
| 作者 | Dong Guo-Ping ; Xiao Xiu-Di ; Ren JJ(任进军) ; Ruan J(阮健) ; Liu Xiao-Feng ; Qiu JR(邱建荣) ; Lin Chang-Gui ; Tao Hai-Zheng ; Zhao Xiu-Jian |
| 刊名 | chin. phys. lett.
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:5页码:1891 |
| 关键词 | RAMAN-SCATTERING EMISSION MECHANISM AMPLIFIERS LASERS SYSTEM |
| ISSN号 | 0256-307x |
| 中文摘要 | near-infrared luminescence is observed from bismuth-doped ges2-ga2s3 chalcogenide glasses excited by an 808 nm laser diode. the emission peak with a maximum at about 1260 nm is observed in 80ges(2)-20ga(2)s(3):0.5bi glass and it shifts toward the long wavelength with the addition of bi gradually. the full width of half maximum (fwhm) is about 200 nm. the broadband infrared luminescence of bi-doped ges2-ga2s3 chalcogenide glasses may be predominantly originated from the low valence state of bi, such as bi+. raman scattering is also conducted to clarify the structure of glasses. these bi-doped ges2-ga2s3 chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system. |
| 语种 | 英语 |
| WOS记录号 | WOS:000256248300101 |
| 公开日期 | 2009-09-24 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/5363]  |
| 专题 | 上海光学精密机械研究所_高功率激光单元技术研发中心 |
| 推荐引用方式 GB/T 7714 | Dong Guo-Ping,Xiao Xiu-Di,Ren JJ,et al. Broadband infrared luminescence from bismuth-doped GeS2-Ga2S3 chalcogenide glasses[J]. chin. phys. lett.,2008,25(5):1891, 1894. |
| APA | Dong Guo-Ping.,Xiao Xiu-Di.,任进军.,阮健.,Liu Xiao-Feng.,...&Zhao Xiu-Jian.(2008).Broadband infrared luminescence from bismuth-doped GeS2-Ga2S3 chalcogenide glasses.chin. phys. lett.,25(5),1891. |
| MLA | Dong Guo-Ping,et al."Broadband infrared luminescence from bismuth-doped GeS2-Ga2S3 chalcogenide glasses".chin. phys. lett. 25.5(2008):1891. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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