Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire
文献类型：期刊论文
| 作者 | Li SZ(李抒智) ; Yang WQ ; Wang YZ ; Liu JF(刘军芳) ; Zhou SM(周圣明) ; Xu J ; Han P ; Zhang R |
| 刊名 | j. cryst. growth
 |
| 出版日期 | 2005 |
| 卷号 | 282期号:1-2页码:186 |
| 关键词 | residual stress sapphire substrate vapor transport equilibration gamma-LiAlO layer |
| ISSN号 | 0022-0248 |
| 中文摘要 | gamma-lialo2 layers with a highly preferred (1 0 0) orientation were prepared by vapor transport equilibration (vte) technique on (0 0 0 1) sapphire substrate. microststructure of the gamma-lialo2 layers was studied by xrd and sem. in the temperature range from 750 to 1100 degrees c, the residual stress in the gamma-lialo2 layers varied from tensile to compressive with the increase of vte temperature, and the critical point of the change between tensile and compressive stress is around 975 degrees c. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 光学材料;晶体 |
| 收录类别 | EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000231200900026 |
| 公开日期 | 2009-09-24 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/5413]  |
| 专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
| 推荐引用方式 GB/T 7714 | Li SZ,Yang WQ,Wang YZ,et al. Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire[J]. j. cryst. growth,2005,282(1-2):186, 189. |
| APA | 李抒智.,Yang WQ.,Wang YZ.,刘军芳.,周圣明.,...&Zhang R.(2005).Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire.j. cryst. growth,282(1-2),186. |
| MLA | 李抒智,et al."Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire".j. cryst. growth 282.1-2(2005):186. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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