Study on the growth, etch morphology and spectra of Y2SiO5 crystal
文献类型：期刊论文
| 作者 | Huiyong Pang ; Zhao GJ(赵广军) ; Mingyin Jie ; Xu J(徐军) ; He XM(何晓明) |
| 刊名 | mater. lett.
 |
| 出版日期 | 2005 |
| 卷号 | 59期号:28页码:3539 |
| 关键词 | Y2SiO5 crystal Czochralski method spectral properties dislocation low-angle boundary |
| ISSN号 | 0167-577x |
| 中文摘要 | undoped y2sio5 single crystal was grown by the czochralski method. the samples were optically polished after orienting and cutting. the rhombus and quadrangular dislocation etching pits, the low-angle grain boundaries and the inclusions in the samples were observed using optical microscope and scanning electron microscope. the absorption spectra were measured before and after h-2 annealing or air annealing. the absorption edge of y2sio5 crystal was determined to be about 202 nm. the absorption coefficient of y2sio5 crystal decreased after h-2 annealing and obviously increased after air annealing. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 光学材料;晶体 |
| 收录类别 | EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000232514200002 |
| 公开日期 | 2009-09-24 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/5471]  |
| 专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
| 推荐引用方式 GB/T 7714 | Huiyong Pang,Zhao GJ,Mingyin Jie,et al. Study on the growth, etch morphology and spectra of Y2SiO5 crystal[J]. mater. lett.,2005,59(28):3539, 3542. |
| APA | Huiyong Pang,赵广军,Mingyin Jie,徐军,&何晓明.(2005).Study on the growth, etch morphology and spectra of Y2SiO5 crystal.mater. lett.,59(28),3539. |
| MLA | Huiyong Pang,et al."Study on the growth, etch morphology and spectra of Y2SiO5 crystal".mater. lett. 59.28(2005):3539. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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