Epitaxial growth of ZnO thin films on LiGaO2 substrates by pulsed-laser deposition
文献类型：期刊论文
| 作者 | Liu Shiliang ; Zhou SM(周圣明) ; Wang Yinzhen ; Zhang Xia ; Li Xiaomin ; Xia ZT(夏长泰) ; Hang Yin ; Xu J(徐军) |
| 刊名 | j. cryst. growth
 |
| 出版日期 | 2006 |
| 卷号 | 292期号:1页码:125 |
| 关键词 | epitaxial growth pulsed-laser deposition LiGaO2 substrates ZnO thin films |
| ISSN号 | 0022-0248 |
| 中文摘要 | lattice-matched (delta(a/a) = 1.8-3.4%) (001) ligao2 substrates have been employed for the first time to grow zno thin films by pulsed-laser deposition at 350-650 degrees c with oxygen partial pressure of 20pa. xrd shows that a highly c-axis-oriented zno film can be deposited on (001) ligao2 substrate at 500 degrees c. afm images reveal the surfaces of as-deposited zno films are smooth and root-mean-square values are 6.662, 5.765 and 6.834 nm at 350, 500 and 650 degrees c, respectively. pl spectra indicate only near-band-edge uv emission appears in the curve of zno film deposited at 500 degrees c. the deep-level emission of zno film deposited at 650 degrees c probably results from li diffusion into the film. all the results illustrate substrate temperature plays a pretty important role in obtaining zno film with a high quality on ligao2 substrate by pulsed-laser deposition. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 光学材料;晶体 |
| 收录类别 | EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000239231600019 |
| 公开日期 | 2009-09-24 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/5481]  |
| 专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
| 推荐引用方式 GB/T 7714 | Liu Shiliang,Zhou SM,Wang Yinzhen,et al. Epitaxial growth of ZnO thin films on LiGaO2 substrates by pulsed-laser deposition[J]. j. cryst. growth,2006,292(1):125, 128. |
| APA | Liu Shiliang.,周圣明.,Wang Yinzhen.,Zhang Xia.,Li Xiaomin.,...&徐军.(2006).Epitaxial growth of ZnO thin films on LiGaO2 substrates by pulsed-laser deposition.j. cryst. growth,292(1),125. |
| MLA | Liu Shiliang,et al."Epitaxial growth of ZnO thin films on LiGaO2 substrates by pulsed-laser deposition".j. cryst. growth 292.1(2006):125. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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