Growth and characterization of new transparent conductive oxides single crystals beta-Ga2O(3): Sn
文献类型：期刊论文
| 作者 | Zhang Jungang ; Xia ZT(夏长泰) ; Deng Qun ; Xu Wusheng ; Shi Hongsheng ; Wu Feng ; Xu J(徐军) |
| 刊名 | j. phys. chem. solids
 |
| 出版日期 | 2006 |
| 卷号 | 67期号:8页码:1656 |
| 关键词 | oxides crystal growth X-ray diffraction optical properties |
| ISSN号 | 0022-3697 |
| 中文摘要 | tin oxide doped beta-ga2o3 single crystals are recognized as transparent conductive oxides (tcos) materials. they have a larger band gap (4.8 ev) than any other tcos, thus can be transparent in uv region. this property shows that they have the potential to make the optoelectronic device used in even shorter wavelength than usual tcos. beta-ga2o3 single crystals doped with different sn4+ concentrations were grown by the floating zone technique. their optical properties and electrical conductivities were systematically studied. it has been found that their conductivities and optical properties were influenced by the sn4+ concentrations and annealing. (c) 2006 elsevier ltd. all rights reserved. |
| 学科主题 | 光学材料;晶体 |
| 收录类别 | EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000240355500009 |
| 公开日期 | 2009-09-24 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/5497]  |
| 专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
| 推荐引用方式 GB/T 7714 | Zhang Jungang,Xia ZT,Deng Qun,et al. Growth and characterization of new transparent conductive oxides single crystals beta-Ga2O(3): Sn[J]. j. phys. chem. solids,2006,67(8):1656, 1659. |
| APA | Zhang Jungang.,夏长泰.,Deng Qun.,Xu Wusheng.,Shi Hongsheng.,...&徐军.(2006).Growth and characterization of new transparent conductive oxides single crystals beta-Ga2O(3): Sn.j. phys. chem. solids,67(8),1656. |
| MLA | Zhang Jungang,et al."Growth and characterization of new transparent conductive oxides single crystals beta-Ga2O(3): Sn".j. phys. chem. solids 67.8(2006):1656. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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