Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition
文献类型：期刊论文
| 作者 | Zhang Jungang ; Li Bin ; Xia ZT(夏长泰) ; Deng Qun ; Xu J(徐军) ; Pei GQ(裴广庆) ; Wu Feng ; Wu Yongqing ; Shi Hongsheng ; Xu Wusheng ; Yang Zhaohui |
| 刊名 | j. cryst. growth
 |
| 出版日期 | 2006 |
| 卷号 | 296期号:2页码:186 |
| 关键词 | atomic force microscopy characterization floating zone technique laser epitaxy zinc compounds semiconducting materials |
| ISSN号 | 0022-0248 |
| 中文摘要 | zinc oxide (zno) thin films were grown on the beta-ga2o3 (100) substrate by pulsed laser deposition (pld). x-ray diffraction (xrd) indicated that the zno films are c-axis oriented. the optical and electrical properties of the films were investigated. the room temperature photoluminescence (pl) spectrum showed a near band emission at 3.28 ev with two deep level emissions. optical absorption indicated a visible exciton absorption at room temperature. the as-grown films had good electrical properties with the resistivities as low as 0.02 omega cm at room temperature. thus, beta-ga2o3 (100) substrate is shown to be a suitable substrate for fabricating zno film. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 光学材料;晶体 |
| 收录类别 | EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000242325300010 |
| 公开日期 | 2009-09-24 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/5517]  |
| 专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
| 推荐引用方式 GB/T 7714 | Zhang Jungang,Li Bin,Xia ZT,et al. Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition[J]. j. cryst. growth,2006,296(2):186, 190. |
| APA | Zhang Jungang.,Li Bin.,夏长泰.,Deng Qun.,徐军.,...&Yang Zhaohui.(2006).Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition.j. cryst. growth,296(2),186. |
| MLA | Zhang Jungang,et al."Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition".j. cryst. growth 296.2(2006):186. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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