Growth studies of m-GaN layers on LiAlO2 by MOCVD
文献类型：期刊论文
| 作者 | Zou Jun ; Liu Cheng-Xiang ; Zhou SM(周圣明) ; Wang Jun ; Zhou Jian-Hua ; Huang Tao-Hua ; Han Ping ; Xie Zi-Li ; Zhang Rong |
| 刊名 | chin. phys.
 |
| 出版日期 | 2006 |
| 卷号 | 15期号:11页码:2706 |
| 关键词 | LiAlO2 substrate m-plane GaN layer optical properties |
| ISSN号 | 1009-1963 |
| 中文摘要 | this paper reports that the m-plane gan layer is grown on (200)-plane lialo2 substrate by metal-organic chemical vapour deposition (mocvd) method. tetragonal-shaped crystallites appear at the smooth surface. raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. the high transmittance (80%), sharp band edge and excitonic absorption peak show that the gan layer has good optical quality. the donor acceptor pair emission peak located at similar to 3.41 ev with full-width at half maximum of 120 mev and no yellow peaks in the photoluminescence spectra partially show that no li incorporated into gan layer from the lialo2 substrate. |
| 学科主题 | 光学材料;晶体 |
| 收录类别 | EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000242215500040 |
| 公开日期 | 2009-09-24 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/5525]  |
| 专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
| 推荐引用方式 GB/T 7714 | Zou Jun,Liu Cheng-Xiang,Zhou SM,et al. Growth studies of m-GaN layers on LiAlO2 by MOCVD[J]. chin. phys.,2006,15(11):2706, 2709. |
| APA | Zou Jun.,Liu Cheng-Xiang.,周圣明.,Wang Jun.,Zhou Jian-Hua.,...&Zhang Rong.(2006).Growth studies of m-GaN layers on LiAlO2 by MOCVD.chin. phys.,15(11),2706. |
| MLA | Zou Jun,et al."Growth studies of m-GaN layers on LiAlO2 by MOCVD".chin. phys. 15.11(2006):2706. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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