Color centers and charge state change in Ce : YAG crystals grown by temperature gradient techniques
文献类型：期刊论文
| 作者 | Dong YJ(董永军) ; Zhou GQ(周国清) ; Xu J ; Zhao GJ(赵广军) ; Su FL ; Su LB(苏良碧) ; Li HJ ; Si JL ; Qian XB ; Li XQ ; Shen J |
| 刊名 | j. cryst. growth
 |
| 出版日期 | 2006 |
| 卷号 | 286期号:2页码:476 |
| 关键词 | defects radiation scintillator materials yttrium compounds |
| ISSN号 | 0022-0248 |
| 中文摘要 | color centers and impurity defects of ce:yag crystals grown in reduction atmosphere by temperature gradient techniques have been investigated by means of gamma irradiation and thermal treatments. four absorption bands associated with color centers or impurity defects at 235, 255, 294 and 370 nm were observed in as-grown crystals. changes in optical intensity of the 235 and 370 nm bands after gamma irradiation indicate that they are associated with f+-type color center. charge state change processes of fe3+ impurity and ce3+ ions take place in the irradiation process. the variations of ce3+ ions concentration clearly indicate that ce4+ ions exist in ce:yag crystals and gamma irradiations could increase the concentration of ce3+ ions. annealing treatments and the changes in optical density suggest that a heterovalent impurity ion associated with the 294 nm band seems to be present in the crystals. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 光学材料;晶体 |
| 收录类别 | EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000234758300041 |
| 公开日期 | 2009-09-24 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/5643]  |
| 专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
| 推荐引用方式 GB/T 7714 | Dong YJ,Zhou GQ,Xu J,et al. Color centers and charge state change in Ce : YAG crystals grown by temperature gradient techniques[J]. j. cryst. growth,2006,286(2):476, 480. |
| APA | 董永军.,周国清.,Xu J.,赵广军.,Su FL.,...&Shen J.(2006).Color centers and charge state change in Ce : YAG crystals grown by temperature gradient techniques.j. cryst. growth,286(2),476. |
| MLA | 董永军,et al."Color centers and charge state change in Ce : YAG crystals grown by temperature gradient techniques".j. cryst. growth 286.2(2006):476. |
入库方式： OAI收割
来源：上海光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。