Defect analysis in Czochralski-grown Yb : FAP crystal
文献类型：期刊论文
| 作者 | Song PX ; Zhao ZW ; Xu XD(徐晓东) ; Deng PZ(邓佩珍) ; Xu J(徐军) |
| 刊名 | j. cryst. growth
 |
| 出版日期 | 2006 |
| 卷号 | 286期号:2页码:498 |
| 关键词 | defects dislocations Yb : FAP crystal |
| ISSN号 | 0022-0248 |
| 中文摘要 | growth-induced defects in yb:fap crystals grown by the czochralski method have been investigated by optical microscopy, chemical etching, scanning electron microscopy (sem) and energy-dispersive spectroscopy (eds). anisotropic etching features have been observed on two fap crystal planes: (0001) and (1010). the shape of etch pits on the (0001) plane is hexagonal, while the etch pits on the (1010) plane have a variety of irregular shapes. it is also found that the density of etch pit varies along the boule. based on the experimental observations, the formation mechanisnis of growth defects are discussed, and methods for reducing the growth-induced defect concentration is proposed. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 光学材料;晶体 |
| 收录类别 | EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000234758300045 |
| 公开日期 | 2009-09-24 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/5725]  |
| 专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
| 推荐引用方式 GB/T 7714 | Song PX,Zhao ZW,Xu XD,et al. Defect analysis in Czochralski-grown Yb : FAP crystal[J]. j. cryst. growth,2006,286(2):498, 501. |
| APA | Song PX,Zhao ZW,徐晓东,邓佩珍,&徐军.(2006).Defect analysis in Czochralski-grown Yb : FAP crystal.j. cryst. growth,286(2),498. |
| MLA | Song PX,et al."Defect analysis in Czochralski-grown Yb : FAP crystal".j. cryst. growth 286.2(2006):498. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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