The growth of gamma-LiAlO2 layer with a highly-preferred orientation on (0001) sapphire
文献类型：期刊论文
| 作者 | Li SZ(李抒智) ; Yang WQ ; Zhou SM(周圣明) ; Xu J(徐军) |
| 刊名 | sci. china ser. e-technol. sci.
 |
| 出版日期 | 2005 |
| 卷号 | 48期号:1页码:116 |
| 关键词 | gamma-LiAlO2 composite substrate vapor transport equilibration |
| ISSN号 | 1006-9321 |
| 中文摘要 | using vapor transport equilibration (vte) technique we succeeded in the fabrication of single-phase gamma-lialo2 layer on (0001) sapphire substrate. x-ray diffraction indicated that the as-fabricated layer was highly textured with [100] orientation at proper vte treatment temperature range from 1050 degrees c to 1100 degrees c. the main factors affecting the quality of the gamma-lialo2 layer were investigated by sem and transmission spectra. these results reveal the possibility of fabricating gamma-lialo2 (100)//sapphire (0001) composite substrate for gan-based epitaxial film by vte. |
| 学科主题 | 光学材料;晶体 |
| 收录类别 | EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000228223500010 |
| 公开日期 | 2009-09-24 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/5785]  |
| 专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
| 推荐引用方式 GB/T 7714 | Li SZ,Yang WQ,Zhou SM,et al. The growth of gamma-LiAlO2 layer with a highly-preferred orientation on (0001) sapphire[J]. sci. china ser. e-technol. sci.,2005,48(1):116, 120. |
| APA | 李抒智,Yang WQ,周圣明,&徐军.(2005).The growth of gamma-LiAlO2 layer with a highly-preferred orientation on (0001) sapphire.sci. china ser. e-technol. sci.,48(1),116. |
| MLA | 李抒智,et al."The growth of gamma-LiAlO2 layer with a highly-preferred orientation on (0001) sapphire".sci. china ser. e-technol. sci. 48.1(2005):116. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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