Yb：Ca5（PO4）3F激光晶体的生长缺陷
文献类型：期刊论文
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| 作者 | 宋平新 ; 赵志伟 ; 徐晓东 ; 邓佩珍 ; 徐军 |
| 刊名 | 硅酸盐学报
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| 出版日期 | 2005 |
| 卷号 | 33期号:11页码:1334 |
| 关键词 | 掺镱氟磷酸钙晶体 提拉法晶体生长 晶体缺陷 位错 激光晶体 |
| ISSN号 | 0454-5648 |
| 其他题名 | Growth defects of Yb:Ca5(PO4)3F laser crystal |
| 中文摘要 | 采用提拉法生长了质量优异的Yb：Ca5（PO4）2F（Yb：FAP）晶体。运用化学腐蚀，光学显微镜、扫描电子显微镜以及能量散射光谱仪观察了该晶体中的生长条纹和包裹物等宏观缺陷，以及晶体的位错腐蚀形貌、位错密度及其分布情况，同时观察了晶体中亚晶界的形态。由晶体中位错的径向变化以及生长条纹可知：晶体在生长过程中为微凸界面生长。高温下CaF2的挥发造成了在晶体生长后期熔体中组分偏离化学计量比，出现组分过冷，形成包裹物。且位错密度显著增加。Yb：FAP晶体的各向异性使得晶体在（10 10）面的位错蚀坑形状、大小以; abstract = {Yb:Ca5(PO4)3F(Yb:FAP) crystal of high quality was grown by the Czochralski method. The macro defects in crystals obtained, including growth striation, inclusions, dislocations, and sub-grain boundary were observed by chemical corrosion, Leitz optical microscopy, scanning electron microscopy and energy dispersive spectroscopy. The dislocation density of radial distribution and growth striation of Yb:FAP crystal reveal that the growth of crystal is on a convex solid-liquid interface. The volatilization of CaF2 at a high temperature causes the deviation in composition from the stoichiometry, which results in the formation of inclusions and an increase in the dislocation density. The shapes of etch pits located on the (0001) plane exhibit a hexagonal structure, whereas the shapes, sizes and lengths of etch pits of dislocations on the (101 over-bar 0) face are different due to the crystal anisotropy of Yb:FAP crystal, which is the main reason for the formation of a sub-grain boundary in Yb:FAP crystal. The methods of reducing the defects were also discussed. |
| 学科主题 | 光学材料;晶体 |
| 分类号 | O782 |
| 收录类别 | ei |
| 语种 | 中文 |
| 公开日期 | 2009-09-24 ; 2010-10-12 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/5803]  |
| 专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
| 推荐引用方式 GB/T 7714 | 宋平新,赵志伟,徐晓东,等. Yb：Ca5（PO4）3F激光晶体的生长缺陷, Growth defects of Yb:Ca5(PO4)3F laser crystal[J]. 硅酸盐学报,2005,33(11):1334, 1338. |
| APA | 宋平新,赵志伟,徐晓东,邓佩珍,&徐军.(2005).Yb：Ca5（PO4）3F激光晶体的生长缺陷.硅酸盐学报,33(11),1334. |
| MLA | 宋平新,et al."Yb：Ca5（PO4）3F激光晶体的生长缺陷".硅酸盐学报 33.11(2005):1334. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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