中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy

文献类型:期刊论文

作者Pei GQ(裴广庆) ; Xia ZT(夏长泰) ; Wu Feng ; Zhang Jungang ; Wu Yongqing ; Xu J(徐军)
刊名mater. lett.
出版日期2007
卷号61页码:2299
关键词liquid phase epitaxy ZnO films
ISSN号0167-577x
中文摘要homoepitaxial zno films have been grown via liquid-phase epitaxy (lpe) on (000 1) oriented zno substrates. x-ray rocking curve revealed the high quality of the zno films with a fwhm of 40 arc sec. films of thickness about 20 gm were gown in the temperature range 700-720 degrees c. the growth rate of zno films was estimated to be 0.3 mu m h(-1). atomic force microscope analysis showed that the surface roughness of zno films was very low, which further confirmed the high crystallinity of zno films. (c) 2006 elsevier b.v. all rights reserved.
学科主题光学材料;晶体
收录类别EI
语种英语
WOS记录号WOS:000246158300044
公开日期2009-09-24
源URL[http://ir.siom.ac.cn/handle/181231/5949]  
专题上海光学精密机械研究所_激光与光电子功能材料研发中心
推荐引用方式
GB/T 7714
Pei GQ,Xia ZT,Wu Feng,et al. Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy[J]. mater. lett.,2007,61:2299, 2302.
APA 裴广庆,夏长泰,Wu Feng,Zhang Jungang,Wu Yongqing,&徐军.(2007).Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy.mater. lett.,61,2299.
MLA 裴广庆,et al."Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy".mater. lett. 61(2007):2299.

入库方式: OAI收割

来源:上海光学精密机械研究所

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