Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy
文献类型:期刊论文
作者 | Pei GQ(裴广庆) ; Xia ZT(夏长泰) ; Wu Feng ; Zhang Jungang ; Wu Yongqing ; Xu J(徐军) |
刊名 | mater. lett.
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出版日期 | 2007 |
卷号 | 61页码:2299 |
关键词 | liquid phase epitaxy ZnO films |
ISSN号 | 0167-577x |
中文摘要 | homoepitaxial zno films have been grown via liquid-phase epitaxy (lpe) on (000 1) oriented zno substrates. x-ray rocking curve revealed the high quality of the zno films with a fwhm of 40 arc sec. films of thickness about 20 gm were gown in the temperature range 700-720 degrees c. the growth rate of zno films was estimated to be 0.3 mu m h(-1). atomic force microscope analysis showed that the surface roughness of zno films was very low, which further confirmed the high crystallinity of zno films. (c) 2006 elsevier b.v. all rights reserved. |
学科主题 | 光学材料;晶体 |
收录类别 | EI |
语种 | 英语 |
WOS记录号 | WOS:000246158300044 |
公开日期 | 2009-09-24 |
源URL | [http://ir.siom.ac.cn/handle/181231/5949] ![]() |
专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
推荐引用方式 GB/T 7714 | Pei GQ,Xia ZT,Wu Feng,et al. Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy[J]. mater. lett.,2007,61:2299, 2302. |
APA | 裴广庆,夏长泰,Wu Feng,Zhang Jungang,Wu Yongqing,&徐军.(2007).Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy.mater. lett.,61,2299. |
MLA | 裴广庆,et al."Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy".mater. lett. 61(2007):2299. |
入库方式: OAI收割
来源:上海光学精密机械研究所
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