导模法和温度梯度法生长r面蓝宝石(英文)
文献类型:期刊论文
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作者 | 杨新波 ; 李红军 ; 徐军 ; 程艳 ; 周国清 |
刊名 | 硅酸盐学报
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出版日期 | 2008 |
卷号 | 36期号:5页码:678 |
关键词 | Dislocation density Edge defined film fed crystal growth (EFG) R plane sapphire Temperature gradient technique Transmittance |
ISSN号 | 0454-5648 |
其他题名 | Growth of r-plane sapphire by edge-defined film-fed growth and temperature gradient technique |
中文摘要 | r面(0112)蓝宝石晶体可用作制备非极性GaN薄膜的衬底。采用温度梯度法(temperature gradient technique,TGT)和导模法(edge-defined film-fed crystal growth,EFG)生长了质量良好的r面蓝宝石晶体。利用双晶衍射、光学显微镜、光谱仪观察和分析了晶体的结构和缺陷。结果表明:TGT法生长的r蓝宝石晶体的双晶摇摆曲线对称性好,半高宽值仅为18 rad.s,位错密度为4×103 cm-2,透过率达83%,晶体质量好。与TGT法相比,EFG法生长的r面蓝宝石晶体的结构完整性较差,位错密度为5×105 cm-2,透过率仅为75%。但是EFG法具有晶体生长速度快,后期加工成本低的优点。; (011¯2) r-plane sapphire is usually used as a substrate for growing nonpolar (112¯0) α-plane GaN film, r-plane sapphires with good quality were successfully grown by temperature gradient technique (TGT) and edge-defined film-fed crystal growth (EFG) methods. The properties of the sapphires were measured by double crystal diffractometry, optical microscopy and optical spectrometry. The results show that the sapphire grown by the TGT method has a dislocation density of 4 × l03 cm-2 and transmittance of 83%, and the full width at half maximum of the double crystal rocking curve is only 18 rad·s. The crystal is higher quality than the EFG sapphire. The dislocation density and transmittance of the sapphire grown by the EFG method are 5 × l05cm-2 and 75%, respectively. However, sapphires can be grown faster using the EFG method, which decreases the processing cost in the production of substrate. |
学科主题 | 光学材料;晶体 |
收录类别 | EI |
语种 | 英语 |
公开日期 | 2009-09-24 |
源URL | [http://ir.siom.ac.cn/handle/181231/6077] ![]() |
专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
推荐引用方式 GB/T 7714 | 杨新波,李红军,徐军,等. 导模法和温度梯度法生长r面蓝宝石(英文), Growth of r-plane sapphire by edge-defined film-fed growth and temperature gradient technique[J]. 硅酸盐学报,2008,36(5):678, 682. |
APA | 杨新波,李红军,徐军,程艳,&周国清.(2008).导模法和温度梯度法生长r面蓝宝石(英文).硅酸盐学报,36(5),678. |
MLA | 杨新波,et al."导模法和温度梯度法生长r面蓝宝石(英文)".硅酸盐学报 36.5(2008):678. |
入库方式: OAI收割
来源:上海光学精密机械研究所
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