Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition
文献类型：期刊论文
| 作者 | Xie Zi-Li ; Zhang Rong ; Xia Chang-Tai ; Xiu Xiang-Qian ; Han Ping ; Liu Bin ; Zhao Hong ; Jiang Ruo-Lian ; Shi Yi ; Zheng You-Dou |
| 刊名 | chin. phys. lett.
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:6页码:2185 |
| 关键词 | GROWTH |
| ISSN号 | 0256-307x |
| 中文摘要 | the growth and fabrication of gan/ingan multiple quantum well (mqw) light emitting diodes ( leds) on ( 100) beta-ga2o3 single crystal substrates by metal-organic chemical vapour deposition (mocvd) technique are reported. x-ray diffraction (xrd) theta-2 theta. scan spectroscopy is carried out on the gan buffer layer grown on a ( 100) beta-ga2o3 substrate. the spectrum presents several sharp peaks corresponding to the ( 100) beta-ga2o3 and ( 004) gan. high-quality ( 0002) gan material is obtained. the emission characteristics of the gan/ingan mqw led are measurement. the first green led on beta-ga2o3 with vertical current injection is demonstrated. |
| 学科主题 | 光学材料;晶体 |
| 语种 | 英语 |
| 公开日期 | 2009-09-24 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/6095]  |
| 专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
| 推荐引用方式 GB/T 7714 | Xie Zi-Li,Zhang Rong,Xia Chang-Tai,et al. Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition[J]. chin. phys. lett.,2008,25(6):2185, 2186. |
| APA | Xie Zi-Li.,Zhang Rong.,Xia Chang-Tai.,Xiu Xiang-Qian.,Han Ping.,...&Zheng You-Dou.(2008).Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition.chin. phys. lett.,25(6),2185. |
| MLA | Xie Zi-Li,et al."Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition".chin. phys. lett. 25.6(2008):2185. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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