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Bulk crystal growth and efficient diode-pumped laser performance of Yb 3+:Sc2SiO5

文献类型：期刊论文

作者Zheng L. ; Xu J(徐军) ; Zhao G. ; Su L. ; Wu F. ; Liang X.
刊名appl. phys. b-lasers opt.
出版日期2008
卷号91期号:3～4页码:443
关键词Energy level diagrams Optical spectroscopic analysis Semi-empirical crystal-field calculations
ISSN号0946-2171
中文摘要a bulk crystal of yb:sc2sio5 (yb:sso) with favorable thermal properties was successfully obtained by the czochralski method. the energy level diagrams for yb:sso crystal were determined by optical spectroscopic analysis and semi-empirical crystal-field calculations using the simple overlap model. the full width at half maximum of the absorption band centering at 976 nm was calculated to be 24 nm with a peak absorption cross-section of 9.2x10(-21) cm(2). the largest ground-state splitting of yb3+ ions is up to 1027 cm(-1) in a sso crystal host. efficient diode-pumped laser performance of yb:sso was primarily demonstrated with a slope efficiency of 45% and output power of 3.55 w.
学科主题光学材料;晶体
收录类别EI
语种英语
公开日期2009-09-24
源URL[http://ir.siom.ac.cn/handle/181231/6159]  
专题上海光学精密机械研究所_激光与光电子功能材料研发中心
推荐引用方式
GB/T 7714		 Zheng L.,Xu J,Zhao G.,et al. Bulk crystal growth and efficient diode-pumped laser performance of Yb 3+:Sc2SiO5[J]. appl. phys. b-lasers opt.,2008,91(3～4):443, 445.
APA Zheng L.,徐军,Zhao G.,Su L.,Wu F.,&Liang X..(2008).Bulk crystal growth and efficient diode-pumped laser performance of Yb 3+:Sc2SiO5.appl. phys. b-lasers opt.,91(3～4),443.
MLA Zheng L.,et al."Bulk crystal growth and efficient diode-pumped laser performance of Yb 3+:Sc2SiO5".appl. phys. b-lasers opt. 91.3～4(2008):443.

入库方式： OAI收割

来源：上海光学精密机械研究所

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