倾斜角沉积技术制备ZnS双折射雕塑薄膜
文献类型：期刊论文
| 作者 | 王素梅 ; 贺洪波 ; 邵建达 ; 范正修 |
| 刊名 | 中国激光
 |
| 出版日期 | 2005 |
| 卷号 | 32期号:12页码:1699 |
| 关键词 | 薄膜 雕塑薄膜 倾斜角沉积 双折射 thin film sculptured thin film glancing angle deposition birefringence |
| ISSN号 | 0258-7025 |
| 其他题名 | ZnS Birefringent Sculptured Thin Film Prepared by Glancing Angle Deposition Technique |
| 中文摘要 | 使用倾斜角沉积（GLAD）的电子束蒸发技术，制备了倾斜角度在60°～85°之间的ZnS双折射雕塑薄膜（STF）。使用X射线衍射（XRD）和扫描电镜（SEM）检测了ZnS薄膜的结晶状态和断面形貌，使用Lamda-900分光光度计测量了薄膜在不同的偏振光入射时的透过率。研究发现，室温下倾斜沉积ZnS薄膜断面为倾斜柱状结构，且薄膜的结晶程度不高。在相同的监控厚度时，随倾斜角度增大，沉积到基片上的薄膜厚度逐渐变小，但仍然大于余弦曲线显示的理论厚度。根据偏振光垂直入射时薄膜的透过光谱计算了不同角度沉积的薄膜的折射率; Glancing angle deposition (GLAD) technique was used to deposit ZnS birefringent sculptured thin film (STF) by electron beam evaporation, and the oblique angle varied from 60° to 85°. The films have been characterized by X-ray diffraction (XRD) and scanning electronic microscopy (SEM). The results show that the cross section of ZnS thin film prepared at room temperature by GLAD technique is oblique columnar structure, and these ZnS thin films grow in low crystallization degree. With the same monitoring thickness, the actual thickness of thin film deposited on the substrate decreases gradually as the oblique angle increases, but this thickness is still greater than theoretical thickness revealed by the cosine curve. The refractive index and birefringence Δn were calculated based on the transmittance curve measured when the incident polarized light was perpendicular to the substrate of ZnS thin film. The results show that the birefringence is most evident when the oblique angle is 75° with the highest birefringence Δn=0.044. |
| 学科主题 | 光学薄膜 |
| 分类号 | O484.1;O484.41 |
| 收录类别 | ei |
| 语种 | 中文 |
| 公开日期 | 2009-09-22 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/4198]  |
| 专题 | 上海光学精密机械研究所_光学薄膜技术研究与发展中心 |
| 推荐引用方式 GB/T 7714 | 王素梅,贺洪波,邵建达,等. 倾斜角沉积技术制备ZnS双折射雕塑薄膜[J]. 中国激光,2005,32(12):1699, 1702. |
| APA | 王素梅,贺洪波,邵建达,&范正修.(2005).倾斜角沉积技术制备ZnS双折射雕塑薄膜.中国激光,32(12),1699. |
| MLA | 王素梅,et al."倾斜角沉积技术制备ZnS双折射雕塑薄膜".中国激光 32.12(2005):1699. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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