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| 作者 | 黄火林
; 张峰
; 吴正云
; 齐红基
; 姚建可
; 范正修
; 邵建达
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| 刊名 | 光学学报
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| 出版日期 | 2008
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| 卷号 | 28期号:12页码:2431 |
| 关键词 | 薄膜光学
Al2O3/SiO2双层减反射膜
电子束蒸发
4H-SiC基底
折射率
4H-SiC substrate
Al2O3/SiO2 double-layer anti-reflection coatings
Deposited layers
Electron beam evaporation
Layer coatings
Layer thicknesses
Physical thicknesses
Reference wavelengths
Reflection spectrums
Scanning electron microscopes
SEM images
Single layers
Thin film optics
UV optoelectronic devices
Wavelength selectivities
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| ISSN号 | 0253-2239
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| 其他题名 | Design and fabrication of Al2O3/SiO2 double-layer antireflection coatings on 4H-SiC substrate
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| 中文摘要 | 在4H-SiC基底上设计并制备了Al2O3/SiO2紫外双层减反射膜,通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性。利用编程计算得到Al2O3和SiO2的最优物理膜厚分别为42.0nm和96.1nm以及参考波长λ=280nm处最小反射率为0.09%。由误差分析可知,实际镀膜时保持双层膜厚度之和与理论值一致有利于降低膜系反射率。实验中应当准确控制SiO2折射率并使Al2O3折射率接近1.715。用电子束蒸发法在4H-SiC基底上淀积Al2O3/SiO2双层膜,厚度分别为42nm和96nm。SEM截面图表明淀积的薄膜和基底间具有较强的附着力。实测反射率极小值为0.33%,对应λ=276nm,与理论结果吻合较好。与传统SiO2单层膜相比,Al2O3/SiO2双层膜具有反射率小,波长选择性好等优点,从而论证了其在4H-SiC基紫外光电器件减反射膜上具有较好的应用前景。; Al2O3/SiO2 double-layer UV antireflection coatings were designed and fabricated on 4H-SiC substrate, and the validity of theoretical design was further verified by scanning electron microscope (SEM) and reflection spectrum. The optimal physical thickness of Al2O3 and SiO2 is 42.0 nm and 96.1 nm respectively by programming calculation. And then the minimum reflectance of 0.09% is obtained at reference wavelength λ=280 nm. According to error analysis, keeping the sum of double-layer thickness consistent with theoretical value is helpful to reduce the reflectance. In addition, the refractive index of SiO2 should more accurate and the refractive index of Al2O3 should be controlled close to 1.715 in the experiment. Al2O3/SiO2 double-layer coatings were deposited on 4H-SiC substrate by electron beam evaporation and the physical thickness is 42 nm and 96 nm respectively. SEM images show that the deposited layers and the substrate perform good adhesion to each other. The practical minimum reflectance is 0.33% at λ=276 nm which is close to theoretical value. Compared with conventional SiO2 single layer, Al2O3/SiO2 double-layer coatings show low reflectance and better wavelength selectivity. These results make the possibility for 4H-SiC based UV optoelectronic devices with Al2O3/SiO2 films as antireflection coatings. |
| 学科主题 | 光学薄膜
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| 收录类别 | EI
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| 语种 | 中文
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| 公开日期 | 2009-09-22
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| 源URL | [http://ir.siom.ac.cn/handle/181231/4634]  |
| 专题 | 上海光学精密机械研究所_光学薄膜技术研究与发展中心
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推荐引用方式
GB/T 7714 |
黄火林,张峰,吴正云,等. 4H-SiC基底Al_2O_3/SiO_2双层减反射膜的设计和制备[J]. 光学学报,2008,28(12):2431, 2435.
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| APA |
黄火林.,张峰.,吴正云.,齐红基.,姚建可.,...&邵建达.(2008).4H-SiC基底Al_2O_3/SiO_2双层减反射膜的设计和制备.光学学报,28(12),2431.
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| MLA |
黄火林,et al."4H-SiC基底Al_2O_3/SiO_2双层减反射膜的设计和制备".光学学报 28.12(2008):2431.
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