High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2 O3 SiO2 films
文献类型:期刊论文
作者 | Zhang Feng ; Yang Weifeng ; Huang Huolin ; Chen Xiaping ; Wu Zhengyun ; Zhu Huili ; Qi Hongji ; Yao JK(姚建可) ; Fan ZX(范正修) ; Shao JD(邵建达) |
刊名 | appl. phys. lett.
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出版日期 | 2008 |
卷号 | 92期号:25页码:251102 |
关键词 | Metal-semiconductor- metal Silicon carbide (SiC) Ultra-violet Ultra-violet photodetectors |
ISSN号 | 0003-6951 |
中文摘要 | 4h-silicon carbide (sic) metal-semiconductor-metal (msm) ultraviolet (uv) photodetectors with al2o3/sio2 (a/s) films employed as antireflection/passivation layers have been demonstrated. the devices showed a peak responsivity of 0.12 a/w at 290 nm and maximum external quantum efficiency of 50% at 280 nm under 20 v electrical bias, which were much larger than conventional msm detectors. the redshift of peak responsivity and response restriction effect were found and analyzed. the a/s/4h-sic msm photodetectors were also shown to possess outstanding features including high uv to visible rejection ratio, large photocurrent, etc. these results demonstrate a/s/4h-sic photodetectors as a promising candidate for oeic applications. (c) 2008 american institute of physics. |
学科主题 | 光学薄膜 |
收录类别 | EI |
语种 | 英语 |
公开日期 | 2009-09-22 |
源URL | [http://ir.siom.ac.cn/handle/181231/4674] ![]() |
专题 | 上海光学精密机械研究所_光学薄膜技术研究与发展中心 |
推荐引用方式 GB/T 7714 |
Zhang Feng,Yang Weifeng,Huang Huolin,et al. High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al |
APA |
Zhang Feng.,Yang Weifeng.,Huang Huolin.,Chen Xiaping.,Wu Zhengyun.,...&邵建达.(2008).High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al |
MLA |
Zhang Feng,et al."High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al |
入库方式: OAI收割
来源:上海光学精密机械研究所
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