中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3 SiO2 films

文献类型:期刊论文

作者Zhang Feng ; Yang Weifeng ; Huang Huolin ; Chen Xiaping ; Wu Zhengyun ; Zhu Huili ; Qi Hongji ; Yao JK(姚建可) ; Fan ZX(范正修) ; Shao JD(邵建达)
刊名appl. phys. lett.
出版日期2008
卷号92期号:25页码:251102
关键词Metal-semiconductor- metal Silicon carbide (SiC) Ultra-violet Ultra-violet photodetectors
ISSN号0003-6951
中文摘要4h-silicon carbide (sic) metal-semiconductor-metal (msm) ultraviolet (uv) photodetectors with al2o3/sio2 (a/s) films employed as antireflection/passivation layers have been demonstrated. the devices showed a peak responsivity of 0.12 a/w at 290 nm and maximum external quantum efficiency of 50% at 280 nm under 20 v electrical bias, which were much larger than conventional msm detectors. the redshift of peak responsivity and response restriction effect were found and analyzed. the a/s/4h-sic msm photodetectors were also shown to possess outstanding features including high uv to visible rejection ratio, large photocurrent, etc. these results demonstrate a/s/4h-sic photodetectors as a promising candidate for oeic applications. (c) 2008 american institute of physics.
学科主题光学薄膜
收录类别EI
语种英语
公开日期2009-09-22
源URL[http://ir.siom.ac.cn/handle/181231/4674]  
专题上海光学精密机械研究所_光学薄膜技术研究与发展中心
推荐引用方式
GB/T 7714
Zhang Feng,Yang Weifeng,Huang Huolin,et al. High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3 SiO2 films[J]. appl. phys. lett.,2008,92(25):251102.
APA Zhang Feng.,Yang Weifeng.,Huang Huolin.,Chen Xiaping.,Wu Zhengyun.,...&邵建达.(2008).High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3 SiO2 films.appl. phys. lett.,92(25),251102.
MLA Zhang Feng,et al."High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3 SiO2 films".appl. phys. lett. 92.25(2008):251102.

入库方式: OAI收割

来源:上海光学精密机械研究所

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