Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films
文献类型:期刊论文
| 作者 | Zhang Dongping ; Wang Congjuan ; Fan Ping ; Cai Xingmin ; Liang Guangxing ; Shao JD(邵建达) ; Fan ZX(范正修) |
| 刊名 | appl. surf. sci.
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| 出版日期 | 2009 |
| 卷号 | 255期号:8页码:4646 |
| 关键词 | Thin film Dual-ion-beam sputtering Substoichiometer |
| ISSN号 | 0169-4332 |
| 中文摘要 | hfo2 is one of the most important high refractive index materials for depositing high power optical mirrors. in this research, hfo2 thin films were prepared by dual-ion beam reactive sputtering method, and the laser-induced damage thresholds (lidt) of the sample were measured in 1-on-1 mode for laser with 1064 nm wavelength. the results indicate that the lidt of the as-grown sample is only 3.96 j/cm(2), but it is increased to 8.98 j/cm(2) after annealing under temperature of 200 degrees c in atmosphere. by measuring the laser weak absorption and sims of the samples, we deduced that substoichiometer is the main reason for the low lidt of the as-grown sample, and the experiment results were well explained with the theory of electronic-avalanche ionization. (c) 2008 elsevier b.v. all rights reserved. |
| 学科主题 | 光学薄膜 |
| 资助信息 | national natural science foundation of china [60608020]; shenzhen government [200717]; shenzhen university [200617] |
| 语种 | 英语 |
| WOS记录号 | WOS:000262695200053 |
| 公开日期 | 2009-09-22 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/4778] ![]() |
| 专题 | 上海光学精密机械研究所_光学薄膜技术研究与发展中心 |
| 推荐引用方式 GB/T 7714 | Zhang Dongping,Wang Congjuan,Fan Ping,et al. Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films[J]. appl. surf. sci.,2009,255(8):4646, 4649. |
| APA | Zhang Dongping.,Wang Congjuan.,Fan Ping.,Cai Xingmin.,Liang Guangxing.,...&范正修.(2009).Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films.appl. surf. sci.,255(8),4646. |
| MLA | Zhang Dongping,et al."Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films".appl. surf. sci. 255.8(2009):4646. |
入库方式: OAI收割
来源:上海光学精密机械研究所
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