Analysis of nanocrystal of porous silicon with high-resolution transmission electron microscopy
文献类型：其他
| 作者 | Lu, Jingmei ; Cheng, Xuan ; Cheng X(程璇) |
| 发布日期 | 2013 |
| 关键词 | Grain boundaries Image processing Materials science Nanocrystals Silicon Silicon wafers Transmission electron microscopy |
| 英文摘要 | Conference Name:2012 International Conference on Advances in Materials Science and Engineering, AMSE 2012. Conference Address: Seoul, Korea, Republic of. Time:December 9, 2012 - December 10, 2012.; The porous silicon samples were prepared with n(111) Si wafers by electrochemical polarization and their microstructures were characterized by high-resolution transmission electron microscopy (HRTEM). The DigitalMicrograph image processing was used to analyze the HRTEM images. The distorted Si (111) crystal plane was observed on porous silicon and could be distinguished with the Fourier transforming electron diffraction (ED) pattern. Grain boundaries were presented in the HRTEM images where the lattice fringes distortions took place. The anisotropy property could be preserved at a small location area because of the smaller nanocrystals in different directions appeared amorphous in the ED pattern at a larger range. ? (2013) Trans Tech Publications, Switzerland. |
| 出处 | http://dx.doi.org/10.4028/www.scientific.net/AMR.650.34 |
| 语种 | 英语 |
| 出版者 | Trans Tech Publications |
| 源URL | [http://dspace.xmu.edu.cn/handle/2288/85110]  |
| 专题 | 材料学院－会议论文 |
| 推荐引用方式 GB/T 7714 | Lu, Jingmei,Cheng, Xuan,Cheng X. Analysis of nanocrystal of porous silicon with high-resolution transmission electron microscopy. 2013-01-01. |
入库方式： OAI收割
来源：厦门大学
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