Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device
文献类型：期刊论文
| 作者 | Guo Chun-Yan1,2,3; Xu Jian-Xing3,4; Peng Hong-Ling5; Ni Hai-Qiao4; Wang Tao1 ; Tian Jin-Shou1; Niu Zhi-Chuan4; Wu Zhao-Xin2; Zuo Jian6; Zhang Cun-Lin6
|
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2017-04-01 |
| 卷号 | 36期号:2页码:220-+ |
| 关键词 | on-chip THz antenna integrated device LT-GaAs epitaxial layer transfer wet chemical etching |
| ISSN号 | 1001-9014 |
| 其他题名 | 片上太赫兹天线集成器件lt_gaas外延转移工艺 |
| 产权排序 | 1 |
| 通讯作者 | niu, zc (reprint author), chinese acad sci, inst semicond, state key lab superlatt, beijing 100083, peoples r china. |
| 英文摘要 | a process for lt-gaas used as photoconductive switch in epitaxial layer transfer of on-chip thz antenna integrated device was provided. hall indicated resistivity of the epitaxial materials gained by mbe was about 10(6)omega center dot cm. hno3-nh4oh-h2o-c3h8o7 center dot h2o-h2o2-hcl and wet chemical etching were used to etch epitaxial materials grown by mbe. gained the structure that 1.5 mu m lt-gaas bounded with cop after lift-off of si-gaas and al0.9ga0.1as. afm sem and high-power microscope indicated that the structure was flat and smooth after lift-off. rms = 2.28 nm. edax indicated there wasn't al in this structure. it can be used to make photoconductive switch. |
| WOS标题词 | science & technology ; physical sciences |
| 学科主题 | optics |
| 类目[WOS] | optics |
| 研究领域[WOS] | optics |
| 关键词[WOS] | transmission-lines |
| 收录类别 | SCI ; EI ; CSCD |
| 语种 | 英语 |
| WOS记录号 | WOS:000400884100016 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/28941]  |
| 专题 | 条纹相机工程中心 |
| 作者单位 | 1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Key Lab Ultrafast Photoelect Diagnost Technol, Xian 710119, Peoples R China 2.Xi An Jiao Tong Univ, Xian 710049, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt, Beijing 100083, Peoples R China 5.Chinese Acad Sci, Inst Semicond, Lab Solid State Photoelect Informat Technol, Beijing 100083, Peoples R China 6.Capital Normal Univ, Dept Phys, Minist Educ, Key Lab Terahertz Optoelect, Beijing 100048, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo Chun-Yan,Xu Jian-Xing,Peng Hong-Ling,et al. Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device[J]. journal of infrared and millimeter waves,2017,36(2):220-+. |
| APA | Guo Chun-Yan.,Xu Jian-Xing.,Peng Hong-Ling.,Ni Hai-Qiao.,Wang Tao.,...&Zhang Cun-Lin.(2017).Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device.journal of infrared and millimeter waves,36(2),220-+. |
| MLA | Guo Chun-Yan,et al."Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device".journal of infrared and millimeter waves 36.2(2017):220-+. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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