Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter
文献类型：期刊论文
| 作者 | da Silva WJ ; Hummelgen IA ; Mello RMQ ; Ma D |
| 刊名 | applied physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 93期号:5页码:文献编号:053301 |
| 关键词 | STATIC INDUCTION TRANSISTOR HIGH-GAIN FILMS |
| ISSN号 | 0003-6951 |
| 通讯作者 | hummelgen ia |
| 中文摘要 | we demonstrate hybrid vertical architecture transistors that operate like metal-base transistors, using n-type silicon as the collector, sulfonated polyaniline as the base, and c-60 fullerene as the emitter. electrical measurements suggest that the sulfonated polyaniline base effectively screens the emitter from electric field variations occurring in the collector leading to the metal-base transistor behavior. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000258335900075 |
| 公开日期 | 2010-04-14 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/9899]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | da Silva WJ,Hummelgen IA,Mello RMQ,et al. Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter[J]. applied physics letters ,2008,93(5):文献编号:053301. |
| APA | da Silva WJ,Hummelgen IA,Mello RMQ,&Ma D.(2008).Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter.applied physics letters ,93(5),文献编号:053301. |
| MLA | da Silva WJ,et al."Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter".applied physics letters 93.5(2008):文献编号:053301. |
入库方式： OAI收割
来源：长春应用化学研究所
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