中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electroluminescence of hole block material caused by electron accumulation and hole penetration

文献类型:期刊论文

作者Zhou L ; Zhang HJ ; Deng RP ; Guo ZY ; Feng J ; Li ZF
刊名journal of physical chemistry c
出版日期2008
卷号112期号:38页码:15065-15070
关键词LIGHT-EMITTING DEVICES ORGANIC ELECTROPHOSPHORESCENCE EUROPIUM COMPLEX RECOMBINATION ZONE TRANSIENT ANALYSIS ENERGY-TRANSFER DIODES EFFICIENCY EMISSION MECHANISMS
ISSN号1932-7447
通讯作者zhang hj
中文摘要in this study, we investigated the electroluminescence (el) mechanisms and processes of hole block material in the multilayer devices with eu(tta)(3)phen (tta = thenoyltrifluoroacetone, phen = 1,10-phenanthroline) doped cbp (4,4'-n,n'-dicarbazolebiphenyl) as the light-emitting layer (eml). first, the hole block ability of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (bcp) was experimentally confirmed by comparing the el spectra. with increasing hole injection, bcp emission emerges and increases gradually due to the increasing hole penetration from eml into the hole block layer (hbl).
收录类别SCI
语种英语
WOS记录号WOS:000259342400054
公开日期2010-04-14
源URL[http://ir.ciac.jl.cn/handle/322003/10099]  
专题长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式
GB/T 7714
Zhou L,Zhang HJ,Deng RP,et al. Electroluminescence of hole block material caused by electron accumulation and hole penetration[J]. journal of physical chemistry c,2008,112(38):15065-15070.
APA Zhou L,Zhang HJ,Deng RP,Guo ZY,Feng J,&Li ZF.(2008).Electroluminescence of hole block material caused by electron accumulation and hole penetration.journal of physical chemistry c,112(38),15065-15070.
MLA Zhou L,et al."Electroluminescence of hole block material caused by electron accumulation and hole penetration".journal of physical chemistry c 112.38(2008):15065-15070.

入库方式: OAI收割

来源:长春应用化学研究所

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