Electroluminescence of hole block material caused by electron accumulation and hole penetration
文献类型：期刊论文
| 作者 | Zhou L ; Zhang HJ ; Deng RP ; Guo ZY ; Feng J ; Li ZF |
| 刊名 | journal of physical chemistry c
 |
| 出版日期 | 2008 |
| 卷号 | 112期号:38页码:15065-15070 |
| 关键词 | LIGHT-EMITTING DEVICES ORGANIC ELECTROPHOSPHORESCENCE EUROPIUM COMPLEX RECOMBINATION ZONE TRANSIENT ANALYSIS ENERGY-TRANSFER DIODES EFFICIENCY EMISSION MECHANISMS |
| ISSN号 | 1932-7447 |
| 通讯作者 | zhang hj |
| 中文摘要 | in this study, we investigated the electroluminescence (el) mechanisms and processes of hole block material in the multilayer devices with eu(tta)(3)phen (tta = thenoyltrifluoroacetone, phen = 1,10-phenanthroline) doped cbp (4,4'-n,n'-dicarbazolebiphenyl) as the light-emitting layer (eml). first, the hole block ability of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (bcp) was experimentally confirmed by comparing the el spectra. with increasing hole injection, bcp emission emerges and increases gradually due to the increasing hole penetration from eml into the hole block layer (hbl). |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000259342400054 |
| 公开日期 | 2010-04-14 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/10099]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhou L,Zhang HJ,Deng RP,et al. Electroluminescence of hole block material caused by electron accumulation and hole penetration[J]. journal of physical chemistry c,2008,112(38):15065-15070. |
| APA | Zhou L,Zhang HJ,Deng RP,Guo ZY,Feng J,&Li ZF.(2008).Electroluminescence of hole block material caused by electron accumulation and hole penetration.journal of physical chemistry c,112(38),15065-15070. |
| MLA | Zhou L,et al."Electroluminescence of hole block material caused by electron accumulation and hole penetration".journal of physical chemistry c 112.38(2008):15065-15070. |
入库方式： OAI收割
来源：长春应用化学研究所
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